Zero differential resistance state at large filling factors

A. T. Hatke, Hung-Sheng Chiang, Michael Zudov, L. N. Pfeiffer, K. W. West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

When a high-mobility two-dimensional electron system is subject to weak electric and magnetic fields, its current-voltage characteristics exhibit a plateau signaling a state with zero differential resistance. At low temperatures, this state emerges over a continuous range of electric and magnetic fields extending well below the onset of the Shubnikov-de Haas oscillations. At higher temperatures, the state evolves into a minimum which becomes weaker and shifts to higher dc fields with increasing temperature.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages629-630
Number of pages2
Volume1399
DOIs
StatePublished - Dec 1 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: Jul 25 2010Jul 30 2010

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period7/25/107/30/10

Fingerprint

electric fields
magnetic fields
plateaus
oscillations
shift
electric potential
electrons
temperature

Keywords

  • high Landau levels
  • nonlinear transport
  • quantum Hall effect
  • two-dimensional electron system
  • zero differential resistance

Cite this

Hatke, A. T., Chiang, H-S., Zudov, M., Pfeiffer, L. N., & West, K. W. (2011). Zero differential resistance state at large filling factors. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (Vol. 1399, pp. 629-630) https://doi.org/10.1063/1.3666535

Zero differential resistance state at large filling factors. / Hatke, A. T.; Chiang, Hung-Sheng; Zudov, Michael; Pfeiffer, L. N.; West, K. W.

Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. Vol. 1399 2011. p. 629-630.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hatke, AT, Chiang, H-S, Zudov, M, Pfeiffer, LN & West, KW 2011, Zero differential resistance state at large filling factors. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. vol. 1399, pp. 629-630, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 7/25/10. https://doi.org/10.1063/1.3666535
Hatke AT, Chiang H-S, Zudov M, Pfeiffer LN, West KW. Zero differential resistance state at large filling factors. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. Vol. 1399. 2011. p. 629-630 https://doi.org/10.1063/1.3666535
Hatke, A. T. ; Chiang, Hung-Sheng ; Zudov, Michael ; Pfeiffer, L. N. ; West, K. W. / Zero differential resistance state at large filling factors. Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. Vol. 1399 2011. pp. 629-630
@inproceedings{7d686b53fee64d7fb3bcf0ce9b9319c4,
title = "Zero differential resistance state at large filling factors",
abstract = "When a high-mobility two-dimensional electron system is subject to weak electric and magnetic fields, its current-voltage characteristics exhibit a plateau signaling a state with zero differential resistance. At low temperatures, this state emerges over a continuous range of electric and magnetic fields extending well below the onset of the Shubnikov-de Haas oscillations. At higher temperatures, the state evolves into a minimum which becomes weaker and shifts to higher dc fields with increasing temperature.",
keywords = "high Landau levels, nonlinear transport, quantum Hall effect, two-dimensional electron system, zero differential resistance",
author = "Hatke, {A. T.} and Hung-Sheng Chiang and Michael Zudov and Pfeiffer, {L. N.} and West, {K. W.}",
year = "2011",
month = "12",
day = "1",
doi = "10.1063/1.3666535",
language = "English (US)",
isbn = "9780735410022",
volume = "1399",
pages = "629--630",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",

}

TY - GEN

T1 - Zero differential resistance state at large filling factors

AU - Hatke, A. T.

AU - Chiang, Hung-Sheng

AU - Zudov, Michael

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - When a high-mobility two-dimensional electron system is subject to weak electric and magnetic fields, its current-voltage characteristics exhibit a plateau signaling a state with zero differential resistance. At low temperatures, this state emerges over a continuous range of electric and magnetic fields extending well below the onset of the Shubnikov-de Haas oscillations. At higher temperatures, the state evolves into a minimum which becomes weaker and shifts to higher dc fields with increasing temperature.

AB - When a high-mobility two-dimensional electron system is subject to weak electric and magnetic fields, its current-voltage characteristics exhibit a plateau signaling a state with zero differential resistance. At low temperatures, this state emerges over a continuous range of electric and magnetic fields extending well below the onset of the Shubnikov-de Haas oscillations. At higher temperatures, the state evolves into a minimum which becomes weaker and shifts to higher dc fields with increasing temperature.

KW - high Landau levels

KW - nonlinear transport

KW - quantum Hall effect

KW - two-dimensional electron system

KW - zero differential resistance

UR - http://www.scopus.com/inward/record.url?scp=84855495948&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855495948&partnerID=8YFLogxK

U2 - 10.1063/1.3666535

DO - 10.1063/1.3666535

M3 - Conference contribution

AN - SCOPUS:84855495948

SN - 9780735410022

VL - 1399

SP - 629

EP - 630

BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30

ER -