Zero differential resistance state at large filling factors

A. T. Hatke, H. S. Chiang, M. A. Zudov, L. N. Pfeiffer, K. W. West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

When a high-mobility two-dimensional electron system is subject to weak electric and magnetic fields, its current-voltage characteristics exhibit a plateau signaling a state with zero differential resistance. At low temperatures, this state emerges over a continuous range of electric and magnetic fields extending well below the onset of the Shubnikov-de Haas oscillations. At higher temperatures, the state evolves into a minimum which becomes weaker and shifts to higher dc fields with increasing temperature.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages629-630
Number of pages2
DOIs
StatePublished - 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: Jul 25 2010Jul 30 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period7/25/107/30/10

Keywords

  • high Landau levels
  • nonlinear transport
  • quantum Hall effect
  • two-dimensional electron system
  • zero differential resistance

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