Zero differential resistance in two-dimensional electron systems at large filling factors

A. T. Hatke, H. S. Chiang, M. A. Zudov, L. N. Pfeiffer, K. W. West

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Abstract

We report on a state characterized by a zero differential resistance observed in very high Landau levels of a high-mobility two-dimensional electron system. Emerging from a minimum of Hall field-induced resistance oscillations at low temperatures, this state exists over a continuous range of magnetic fields extending well below the onset of the Shubnikov-de Haas effect. The minimum current required to support this state is largely independent on the magnetic field while the maximum current increases with the magnetic field tracing the onset of inter-Landau level scattering.

Original languageEnglish (US)
Article number041304
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number4
DOIs
StatePublished - Jul 21 2010

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