Yb diffusion barriers at Hg1-xCdxTe interfaces with Al, In, and Cr

A. Raisanen, D. J. Peterman, A. Wall, S. Chang, G. Haugstad, X. Yu, A. Franciosi

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We have performed synchrotron radiation photoemission studies of the formation of Hg1-xCdxTe/metal junctions in the presence of predeposited thin (3-15 Å) Yb layers. Metals examined include Cr, In, and Al. Semi-empirical calculations of bulk binary thermodynamic parameters for each interface suggest that the rare-earth metal should act as an effective diffusion barrier. Correspondingly, we found that Yb interlayers reduce or eliminate metal-Te reaction, Te outdiffusion, and the Hg-depletion of the near-surface region in all cases examined.

Original languageEnglish (US)
Pages (from-to)585-589
Number of pages5
JournalSolid State Communications
Volume71
Issue number7
DOIs
StatePublished - Aug 1989

Bibliographical note

Funding Information:
Acknowledgements-This work was supported by the Office of Naval Research under grants NOOO14-84-K-0545 and NOOO14-89-J-1407, by the McDonnell Douglas Independent Research and Development Program, and by the NSF Center for Interfacial Engineering of the University of Minnesota. We are in debt to G.D. Davis and D.J. Friedman for communicating their results to us prior to publication. We thank the entire staff of the Synchrotron Radiation Center of the University of Wisconsin-Madison: supported by the National Science Foundatron, for their cheerful support.

Fingerprint Dive into the research topics of 'Yb diffusion barriers at Hg<sub>1-x</sub>Cd<sub>x</sub>Te interfaces with Al, In, and Cr'. Together they form a unique fingerprint.

Cite this