XAFS studies of the formation of cobalt silicide on (√3 × √3) SiC(0001)

W. Platow, D. E. Wood, J. E. Burnette, R. J. Nemanich, D. E. Sayers

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Thin Co films (1-8 nm) were directly, sequentially, and co-deposited with Si (3.6-29.2 nm) on the (√3 × √3)-R30° reconstruction of 6H-SiC(0001). The films were annealed over a temperature range of 823-1373K and investigated with XAFS, XPS, AES and AFM. After annealing up to 1373K directly deposited Co films do not transform entirely to cobalt disilicide and C segregation is observed on the surface of the films. On the other hand, sequentially and co-deposited films do form cobalt disilicide after annealing at 823K, but also show islanding after annealing at 923K.

Original languageEnglish (US)
Pages (from-to)475-477
Number of pages3
JournalJournal of Synchrotron Radiation
Volume8
Issue number2
DOIs
StatePublished - Mar 1 2001
Externally publishedYes

Keywords

  • Cobalt silicide
  • Metal-semiconductor contacts
  • Molecular beam epitaxy
  • Silicon carbide

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