XAFS studies of the formation of cobalt silicide on (√3 × √3) SiC(0001)

W. Platow; D. E. Wood; J. E. Burnette; R. J. Nemanich; D. E. Sayers

doi:10.1107/S0909049500017921

XAFS studies of the formation of cobalt silicide on (√3 × √3) SiC(0001)

W. Platow, D. E. Wood, J. E. Burnette, R. J. Nemanich, D. E. Sayers

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Thin Co films (1-8 nm) were directly, sequentially, and co-deposited with Si (3.6-29.2 nm) on the (√3 × √3)-R30° reconstruction of 6H-SiC(0001). The films were annealed over a temperature range of 823-1373K and investigated with XAFS, XPS, AES and AFM. After annealing up to 1373K directly deposited Co films do not transform entirely to cobalt disilicide and C segregation is observed on the surface of the films. On the other hand, sequentially and co-deposited films do form cobalt disilicide after annealing at 823K, but also show islanding after annealing at 923K.

Original language	English (US)
Pages (from-to)	475-477
Number of pages	3
Journal	Journal of Synchrotron Radiation
Volume	8
Issue number	2
DOIs	https://doi.org/10.1107/S0909049500017921
State	Published - Mar 1 2001
Externally published	Yes

Keywords

Cobalt silicide
Metal-semiconductor contacts
Molecular beam epitaxy
Silicon carbide

Publisher link

10.1107/S0909049500017921

Find It

Find It at U of M Libraries

Cite this

@article{c7129fcbab9c465781a389c98a16659e,

title = "XAFS studies of the formation of cobalt silicide on (√3 × √3) SiC(0001)",

abstract = "Thin Co films (1-8 nm) were directly, sequentially, and co-deposited with Si (3.6-29.2 nm) on the (√3 × √3)-R30° reconstruction of 6H-SiC(0001). The films were annealed over a temperature range of 823-1373K and investigated with XAFS, XPS, AES and AFM. After annealing up to 1373K directly deposited Co films do not transform entirely to cobalt disilicide and C segregation is observed on the surface of the films. On the other hand, sequentially and co-deposited films do form cobalt disilicide after annealing at 823K, but also show islanding after annealing at 923K.",

keywords = "Cobalt silicide, Metal-semiconductor contacts, Molecular beam epitaxy, Silicon carbide",

author = "W. Platow and Wood, {D. E.} and Burnette, {J. E.} and Nemanich, {R. J.} and Sayers, {D. E.}",

year = "2001",

month = mar,

day = "1",

doi = "10.1107/S0909049500017921",

language = "English (US)",

volume = "8",

pages = "475--477",

journal = "Journal of Synchrotron Radiation",

issn = "0909-0495",

publisher = "International Union of Crystallography",

number = "2",

}

TY - JOUR

T1 - XAFS studies of the formation of cobalt silicide on (√3 × √3) SiC(0001)

AU - Platow, W.

AU - Wood, D. E.

AU - Burnette, J. E.

AU - Nemanich, R. J.

AU - Sayers, D. E.

PY - 2001/3/1

Y1 - 2001/3/1

N2 - Thin Co films (1-8 nm) were directly, sequentially, and co-deposited with Si (3.6-29.2 nm) on the (√3 × √3)-R30° reconstruction of 6H-SiC(0001). The films were annealed over a temperature range of 823-1373K and investigated with XAFS, XPS, AES and AFM. After annealing up to 1373K directly deposited Co films do not transform entirely to cobalt disilicide and C segregation is observed on the surface of the films. On the other hand, sequentially and co-deposited films do form cobalt disilicide after annealing at 823K, but also show islanding after annealing at 923K.

AB - Thin Co films (1-8 nm) were directly, sequentially, and co-deposited with Si (3.6-29.2 nm) on the (√3 × √3)-R30° reconstruction of 6H-SiC(0001). The films were annealed over a temperature range of 823-1373K and investigated with XAFS, XPS, AES and AFM. After annealing up to 1373K directly deposited Co films do not transform entirely to cobalt disilicide and C segregation is observed on the surface of the films. On the other hand, sequentially and co-deposited films do form cobalt disilicide after annealing at 823K, but also show islanding after annealing at 923K.

KW - Cobalt silicide

KW - Metal-semiconductor contacts

KW - Molecular beam epitaxy

KW - Silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=0035288824&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035288824&partnerID=8YFLogxK

U2 - 10.1107/S0909049500017921

DO - 10.1107/S0909049500017921

M3 - Article

C2 - 11512820

AN - SCOPUS:0035288824

SN - 0909-0495

VL - 8

SP - 475

EP - 477

JO - Journal of Synchrotron Radiation

JF - Journal of Synchrotron Radiation

IS - 2

ER -

XAFS studies of the formation of cobalt silicide on (√3 × √3) SiC(0001)

Abstract

Keywords

Publisher link

Find It

Other files and links

Fingerprint

Cite this