X-ray lithography processing at CXrL from beamline to quarter-micron NMOS devices

Ramez Nachman, Gong Chen, Michael T. Reilly, Gregory M. Wells, John P. Wallace, Hsin H. Li, Azalia A. Krasnoperova, Paul D. Anderson, Eric Brodsky, Eti Ganin, Stephen A. Campbell, James W. Taylor, Franco Cerrina

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this paper we present the activities at the Center for X-ray Lithography (CXrL) that are dedicated to applying x-ray lithography to 0.25 μm processing. We first present the results of optimizing the parameters of the x-ray resist, AZ-PF 514, to achieve 0.25 micron features with variations of less than 10%; second, we discuss the properties of an exposure station (ES3) that feeds the in-house built aligner; third, we present the novel in-house built Two State Aligner (TSA) and its ability to achieve < 32 nm registration error; fourth, we present a developed fabrication process that produces masks with the required membrane stress, optical transparency, and mask flatness; and finally, we present the integration of all the above subprocesses by showing preliminary results from the in-progress 0.25 μm NMOS device run. The requirements and results of each sub-process are discussed and judged according to the 0.25 μm error budget goals that were initially set for 1997.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsDavid O. Patterson
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages106-118
Number of pages13
ISBN (Print)0819414891
StatePublished - Dec 1 1994
EventElectron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV - San Jose, CA, USA
Duration: Feb 28 1994Mar 1 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2194
ISSN (Print)0277-786X

Other

OtherElectron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV
CitySan Jose, CA, USA
Period2/28/943/1/94

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    Nachman, R., Chen, G., Reilly, M. T., Wells, G. M., Wallace, J. P., Li, H. H., Krasnoperova, A. A., Anderson, P. D., Brodsky, E., Ganin, E., Campbell, S. A., Taylor, J. W., & Cerrina, F. (1994). X-ray lithography processing at CXrL from beamline to quarter-micron NMOS devices. In D. O. Patterson (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 106-118). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2194). Publ by Society of Photo-Optical Instrumentation Engineers.