@inproceedings{7aa058b0122f44f79cbda5b722913a53,
title = "X-ray lithography processing at CXrL from beamline to quarter-micron NMOS devices",
abstract = "In this paper we present the activities at the Center for X-ray Lithography (CXrL) that are dedicated to applying x-ray lithography to 0.25 μm processing. We first present the results of optimizing the parameters of the x-ray resist, AZ-PF 514, to achieve 0.25 micron features with variations of less than 10%; second, we discuss the properties of an exposure station (ES3) that feeds the in-house built aligner; third, we present the novel in-house built Two State Aligner (TSA) and its ability to achieve < 32 nm registration error; fourth, we present a developed fabrication process that produces masks with the required membrane stress, optical transparency, and mask flatness; and finally, we present the integration of all the above subprocesses by showing preliminary results from the in-progress 0.25 μm NMOS device run. The requirements and results of each sub-process are discussed and judged according to the 0.25 μm error budget goals that were initially set for 1997.",
author = "Ramez Nachman and Gong Chen and Reilly, {Michael T.} and Wells, {Gregory M.} and Wallace, {John P.} and Li, {Hsin H.} and Krasnoperova, {Azalia A.} and Anderson, {Paul D.} and Eric Brodsky and Eti Ganin and Campbell, {Stephen A.} and Taylor, {James W.} and Franco Cerrina",
year = "1994",
doi = "10.1117/12.175835",
language = "English (US)",
isbn = "0819414891",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Society of Photo-Optical Instrumentation Engineers",
pages = "106--118",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV ; Conference date: 28-02-1994 Through 01-03-1994",
}