Abstract
The electrical characteristics of ultrathin oxides used in an x-ray lithography n-channel metal-oxide-silicon process grown at 700 and 950°C were studied. The breakdown field exceeded 15 MV/cm for both low and high temperature oxides and the interface trap density of the fresh oxide was of order of 1010 cm-2 eV-1. Oxides grown at 950°C had a lower interface trap density than 700°C oxides, but 950°C oxides are more sensitive to x-ray radiation damage. After 350°C hydrogen annealing about 80% of the radiation damage in the form of interface traps was recovered.
Original language | English (US) |
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Pages (from-to) | 1635-1637 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 61 |
Issue number | 14 |
DOIs | |
State | Published - 1992 |