X-ray damage in low temperature ultrathin silicon dioxide

K. H. Lee, Stephen A Campbell, R. Nachman, M. Reilly, F. Cerrina

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The electrical characteristics of ultrathin oxides used in an x-ray lithography n-channel metal-oxide-silicon process grown at 700 and 950°C were studied. The breakdown field exceeded 15 MV/cm for both low and high temperature oxides and the interface trap density of the fresh oxide was of order of 1010 cm-2 eV-1. Oxides grown at 950°C had a lower interface trap density than 700°C oxides, but 950°C oxides are more sensitive to x-ray radiation damage. After 350°C hydrogen annealing about 80% of the radiation damage in the form of interface traps was recovered.

Original languageEnglish (US)
Pages (from-to)1635-1637
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number14
DOIs
StatePublished - Dec 1 1992

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