@inproceedings{4e01ceda2ff84dd8b0d27fe346fec6fa,
title = "Write disturb analyses on half-selected cells of cross-point RRAM arrays",
abstract = "Write disturb on half-selected (HS) cells is investigated through electrical measurements and large-scale array simulations. The experimental results collected from the individual devices under constant stress voltage and consecutive pulse operation are correlated with the HS cells in large-scale arrays based on a physics-based SPICE compact model. The impact of write/read disturb on the HS cells at different locations of the arrays is analyzed. Design guidelines for the optimized array size based on the experimental data and HSPICE simulations are presented: e.g., a 16 kb array can maintain its stored data pattern for 5×106 pulses and will have 164 false bits among half-selected cells after write disturb.",
keywords = "Resistive random access memory (RRAM), cross-point, failure, reliability, write disturb",
author = "Haitong Li and Chen, {Hong Yu} and Zhe Chen and Bing Chen and Rui Liu and Gang Qiu and Peng Huang and Feifei Zhang and Zizhen Jiang and Bin Gao and Lifeng Liu and Xiaoyan Liu and Shimeng Yu and Wong, {H. S.Philip} and Jinfeng Kang",
year = "2014",
doi = "10.1109/IRPS.2014.6861158",
language = "English (US)",
isbn = "9781479933167",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "MY.3.1--MY.3.4",
booktitle = "2014 IEEE International Reliability Physics Symposium, IRPS 2014",
note = "52nd IEEE International Reliability Physics Symposium, IRPS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",
}