Width-dependent statistical leakage modeling for random dopant induced threshold voltage shift

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

Statistical behavior of device leakage and threshold voltage shows a strong width dependency under microscopic random dopant fluctuation. Leakage estimation using the conventional square-root method shows a discrepancy as large as 45% compared to the real case because it fails to model the effective V T shift in the subthreshold region. This paper presents a width-dependent statistical leakage model with an estimation error less than 5%. Design examples on SRAMs and domino circuits demonstrate the significance of the proposed model.

Original languageEnglish (US)
Title of host publication2007 44th ACM/IEEE Design Automation Conference, DAC'07
Pages87-92
Number of pages6
DOIs
StatePublished - Aug 2 2007
Event2007 44th ACM/IEEE Design Automation Conference, DAC'07 - San Diego, CA, United States
Duration: Jun 4 2007Jun 8 2007

Publication series

NameProceedings - Design Automation Conference
ISSN (Print)0738-100X

Other

Other2007 44th ACM/IEEE Design Automation Conference, DAC'07
CountryUnited States
CitySan Diego, CA
Period6/4/076/8/07

Keywords

  • Leakage
  • Process variation
  • Random dopant fluctuation

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  • Cite this

    Gu, J., Sapatnekar, S. S., & Kim, C. (2007). Width-dependent statistical leakage modeling for random dopant induced threshold voltage shift. In 2007 44th ACM/IEEE Design Automation Conference, DAC'07 (pp. 87-92). [4261149] (Proceedings - Design Automation Conference). https://doi.org/10.1109/DAC.2007.375130