Wide-gap semiconducting graphene from nitrogen-seeded SiC

F. Wang, G. Liu, S. Rothwell, M. Nevius, A. Tejeda, A. Taleb-Ibrahimi, L. C. Feldman, P. I. Cohen, E. H. Conrad

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


All carbon electronics based on graphene have been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of graphene electronics. We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it grows. The resulting buckled graphene opens a band gap greater than 0.7 eV in the otherwise continuous metallic graphene sheet.

Original languageEnglish (US)
Pages (from-to)4827-4832
Number of pages6
JournalNano letters
Issue number10
StatePublished - Oct 9 2013


  • Graphene
  • SiC
  • dopants
  • graphite
  • graphite thin film
  • silicon carbide


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