Wide Bandgap Perovskite Oxides with High Room-Temperature Electron Mobility

Abhinav Prakash, Bharat Jalan

Research output: Contribution to journalReview article

Abstract

Perovskite oxides are ABO3-type compounds with a crystal structure capable of accommodating a large number of elements at A- and B-sites. Owing to their flexible structure and complex chemistry, they exhibit a wide range of functionalities as well as novel ground states at the interface. However, in comparison with conventional semiconductors such as silicon, they possess orders of magnitude lower room-temperature electron mobilities limiting their room-temperature electronic applications. For example, in a prototypical doped SrTiO3, the room-temperature electron mobility remains below 10 cm2 V−1 s−1 regardless of the defect minimization. Discovery of high room-temperature mobility in alkaline-earth stannates such as BaSnO3 and SrSnO3 constitutes a significant advancement toward all-perovskite electronic and spintronic devices. Alkaline-earth stannates also possess wide-to-ultra wide bandgaps that make them potentially suitable candidate for transparent conductors, power electronic devices, and high electron mobility transistors. This article provides an overview of the recent progress made to these materials' electrical properties with particular emphasis on the advancements in the molecular beam epitaxy approaches for their synthesis, and defect control.

Original languageEnglish (US)
Article number1900479
JournalAdvanced Materials Interfaces
Volume6
Issue number15
DOIs
StatePublished - Jan 1 2019

Fingerprint

Electron mobility
Perovskite
Energy gap
Oxides
Earth (planet)
Temperature
Magnetoelectronics
Defects
Flexible structures
High electron mobility transistors
Power electronics
Molecular beam epitaxy
Ground state
Electric properties
Crystal structure
Semiconductor materials
Silicon

Keywords

  • defects
  • high mobility
  • hybrid molecular beam epitaxy
  • perovskites
  • stannates
  • transparent conducting oxides
  • wide bandgap

How much support was provided by MRSEC?

  • Partial

Reporting period for MRSEC

  • Period 6

Cite this

Wide Bandgap Perovskite Oxides with High Room-Temperature Electron Mobility. / Prakash, Abhinav; Jalan, Bharat.

In: Advanced Materials Interfaces, Vol. 6, No. 15, 1900479, 01.01.2019.

Research output: Contribution to journalReview article

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N2 - Perovskite oxides are ABO3-type compounds with a crystal structure capable of accommodating a large number of elements at A- and B-sites. Owing to their flexible structure and complex chemistry, they exhibit a wide range of functionalities as well as novel ground states at the interface. However, in comparison with conventional semiconductors such as silicon, they possess orders of magnitude lower room-temperature electron mobilities limiting their room-temperature electronic applications. For example, in a prototypical doped SrTiO3, the room-temperature electron mobility remains below 10 cm2 V−1 s−1 regardless of the defect minimization. Discovery of high room-temperature mobility in alkaline-earth stannates such as BaSnO3 and SrSnO3 constitutes a significant advancement toward all-perovskite electronic and spintronic devices. Alkaline-earth stannates also possess wide-to-ultra wide bandgaps that make them potentially suitable candidate for transparent conductors, power electronic devices, and high electron mobility transistors. This article provides an overview of the recent progress made to these materials' electrical properties with particular emphasis on the advancements in the molecular beam epitaxy approaches for their synthesis, and defect control.

AB - Perovskite oxides are ABO3-type compounds with a crystal structure capable of accommodating a large number of elements at A- and B-sites. Owing to their flexible structure and complex chemistry, they exhibit a wide range of functionalities as well as novel ground states at the interface. However, in comparison with conventional semiconductors such as silicon, they possess orders of magnitude lower room-temperature electron mobilities limiting their room-temperature electronic applications. For example, in a prototypical doped SrTiO3, the room-temperature electron mobility remains below 10 cm2 V−1 s−1 regardless of the defect minimization. Discovery of high room-temperature mobility in alkaline-earth stannates such as BaSnO3 and SrSnO3 constitutes a significant advancement toward all-perovskite electronic and spintronic devices. Alkaline-earth stannates also possess wide-to-ultra wide bandgaps that make them potentially suitable candidate for transparent conductors, power electronic devices, and high electron mobility transistors. This article provides an overview of the recent progress made to these materials' electrical properties with particular emphasis on the advancements in the molecular beam epitaxy approaches for their synthesis, and defect control.

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