Water Quenched and Acceptor-Doped Textured Piezoelectric Ceramics for Off-Resonance and On-Resonance Devices

Haoyang Leng, Yu U. Wang, Yongke Yan, Sumanta Kumar Karan, Ke Wang, Xiaotian Li, Mark Fanton, Joshua J. Fox, Shashank Priya

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Piezoelectric materials should simultaneously possess the soft properties (high piezoelectric coefficient, d33; high voltage coefficient, g33; high electromechanical coupling factor, k) and hard properties (high mechanical quality factor, Qm; low dielectric loss, tan δ) along with wide operation temperature (e.g., high rhombohedral–tetragonal phase transition temperature Tr–t) for covering off-resonance (figure of merit (FOM), d33 × g33) and on-resonance (FOM, Qm × k2) applications. However, achieving hard and soft piezoelectric properties simultaneously along with high transition temperature is quite challenging since these properties are inversely related to each other. Here, through a synergistic design strategy of combining composition/phase selection, crystallographic texturing, defect engineering, and water quenching technique, <001> textured 2 mol% MnO2 doped 0.19PIN-0.445PSN-0.365PT ceramics exhibiting giant FOM values of Qm × (Formula presented.) (227–261) along with high d33 × g33 (28–35 × 10−12 m2 N−1), low tan δ (0.3–0.39%) and high Tr–t of 140–190 °C, which is far beyond the performance of the state-of-the-art piezoelectric materials, are fabricated. Further, a novel water quenching (WQ) room temperature poling technique, which results in enhanced piezoelectricity of textured MnO2 doped PIN-PSN-PT ceramics, is reported. Based upon the experiments and phase-field modeling, the enhanced piezoelectricity is explained in terms of the quenching-induced rhombohedral phase formation. These findings will have tremendous impact on development of high performance off-resonance and on-resonance piezoelectric devices with high stability.

Original languageEnglish (US)
Article number2204454
JournalSmall
Volume19
Issue number1
DOIs
StateAccepted/In press - 2022
Externally publishedYes

Bibliographical note

Funding Information:
H.L. and Y.Y. acknowledge the support from DARPA through award number HR00111920001. S.K.K. acknowledges the support through Army RIF program. X.L. acknowledges the support from National Science Foundation through award number 1936432. S.P. acknowledges the support from USDA NIFA through award number 2019‐67021‐28991. YUW acknowledges the support from XSEDE for supercomputing resource to perform phase field simulation. The authors thank Dr. Haiying Wang for FIB sample preparation for TEM. All microscopy work was performed at the Penn State Materials Characterization Laboratory.

Publisher Copyright:
© 2022 Wiley-VCH GmbH.

Keywords

  • acceptor-doping
  • piezoelectric
  • texturing
  • water-quenching

PubMed: MeSH publication types

  • Journal Article

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