Wall relaxation of 3He in spin-exchange cells

R. E. Jacob, S. W. Morgan, B. Saam, J. C. Leawoods

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Abstract

Evidence is given that magnetic sites, showing remanence and hysteresis, significantly affect wall relaxation in spin-exchange cells. It is demonstrated that large reversible changes in T1-1, and hence in the corresponding surface relaxation sites, are induced in such cells mainly by exposing them to a large (10 KG) magnetic field. This effect is correlated with the presence of Rb in these cells.

Original languageEnglish (US)
Article number143004
Pages (from-to)143004/1-143004/4
JournalPhysical Review Letters
Volume87
Issue number14
DOIs
StatePublished - Oct 1 2001
Externally publishedYes

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