W-band SiGe power amplifiers

Peter Song; Ahmet Cagn Ulusoy; Robert L. Schmid; Saeed N. Zeinolabedinzadeh; John D. Cressler

doi:10.1109/BCTM.2014.6981303

W-band SiGe power amplifiers

Peter Song
, Ahmet Cagn Ulusoy
, Robert L. Schmid
, Saeed N. Zeinolabedinzadeh
, John D. Cressler

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Scopus citations

Abstract

This paper presents W-band cascode power amplifiers implemented in a 90 nm SiGe BiCMOS technology. The one-way cascode PA achieves a saturated output power of 18.0 dBm with 17.2% peak PAE at 93 GHz. The two-way power-combined cascode PA achieves a saturated output power of 20.8 dBm with 14.5% peak PAE at 93 GHz. The one-way PA and two-way power-combined SiGe PAs occupy an area of 0.29 mm² and 0.57 mm² without pads, respectively. To the authors' best knowledge, this work demonstrates the highest PAEs and associated output powers achieved by W-band PAs in any silicon-based technology to date.

Original language	English (US)
Title of host publication	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	151-154
Number of pages	4
ISBN (Electronic)	9781479972302
DOIs	https://doi.org/10.1109/BCTM.2014.6981303
State	Published - Dec 9 2014
Externally published	Yes
Event	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 - Coronado, United States Duration: Sep 28 2014 → Oct 1 2014

Publication series

Name	Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)	1088-9299

Conference

Conference	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
Country/Territory	United States
City	Coronado
Period	9/28/14 → 10/1/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

millimeter-wave integrated circuits
power amplifier
SiGe
silicon-germanium
W-band

Publisher link

10.1109/BCTM.2014.6981303

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Song, P., Ulusoy, A. C., Schmid, R. L., Zeinolabedinzadeh, S. N., & Cressler, J. D. (2014). W-band SiGe power amplifiers. In 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 (pp. 151-154). Article 6981303 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCTM.2014.6981303

W-band SiGe power amplifiers. / Song, Peter; Ulusoy, Ahmet Cagn; Schmid, Robert L. et al.
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 151-154 6981303 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Song, P, Ulusoy, AC, Schmid, RL, Zeinolabedinzadeh, SN & Cressler, JD 2014, W-band SiGe power amplifiers. in 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014., 6981303, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Institute of Electrical and Electronics Engineers Inc., pp. 151-154, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014, Coronado, United States, 9/28/14. https://doi.org/10.1109/BCTM.2014.6981303

@inproceedings{b9170a7b72f147d38986da7baa7219f1,

title = "W-band SiGe power amplifiers",

abstract = "This paper presents W-band cascode power amplifiers implemented in a 90 nm SiGe BiCMOS technology. The one-way cascode PA achieves a saturated output power of 18.0 dBm with 17.2\% peak PAE at 93 GHz. The two-way power-combined cascode PA achieves a saturated output power of 20.8 dBm with 14.5\% peak PAE at 93 GHz. The one-way PA and two-way power-combined SiGe PAs occupy an area of 0.29 mm2 and 0.57 mm2 without pads, respectively. To the authors' best knowledge, this work demonstrates the highest PAEs and associated output powers achieved by W-band PAs in any silicon-based technology to date.",

keywords = "millimeter-wave integrated circuits, power amplifier, SiGe, silicon-germanium, W-band",

author = "Peter Song and Ulusoy, \{Ahmet Cagn\} and Schmid, \{Robert L.\} and Zeinolabedinzadeh, \{Saeed N.\} and Cressler, \{John D.\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 ; Conference date: 28-09-2014 Through 01-10-2014",

year = "2014",

month = dec,

day = "9",

doi = "10.1109/BCTM.2014.6981303",

language = "English (US)",

series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "151--154",

booktitle = "2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014",

}

TY - GEN

T1 - W-band SiGe power amplifiers

AU - Song, Peter

AU - Ulusoy, Ahmet Cagn

AU - Schmid, Robert L.

AU - Zeinolabedinzadeh, Saeed N.

AU - Cressler, John D.

PY - 2014/12/9

Y1 - 2014/12/9

N2 - This paper presents W-band cascode power amplifiers implemented in a 90 nm SiGe BiCMOS technology. The one-way cascode PA achieves a saturated output power of 18.0 dBm with 17.2% peak PAE at 93 GHz. The two-way power-combined cascode PA achieves a saturated output power of 20.8 dBm with 14.5% peak PAE at 93 GHz. The one-way PA and two-way power-combined SiGe PAs occupy an area of 0.29 mm2 and 0.57 mm2 without pads, respectively. To the authors' best knowledge, this work demonstrates the highest PAEs and associated output powers achieved by W-band PAs in any silicon-based technology to date.

AB - This paper presents W-band cascode power amplifiers implemented in a 90 nm SiGe BiCMOS technology. The one-way cascode PA achieves a saturated output power of 18.0 dBm with 17.2% peak PAE at 93 GHz. The two-way power-combined cascode PA achieves a saturated output power of 20.8 dBm with 14.5% peak PAE at 93 GHz. The one-way PA and two-way power-combined SiGe PAs occupy an area of 0.29 mm2 and 0.57 mm2 without pads, respectively. To the authors' best knowledge, this work demonstrates the highest PAEs and associated output powers achieved by W-band PAs in any silicon-based technology to date.

KW - millimeter-wave integrated circuits

KW - power amplifier

KW - SiGe

KW - silicon-germanium

KW - W-band

UR - https://www.scopus.com/pages/publications/84919651088

UR - https://www.scopus.com/pages/publications/84919651088#tab=citedBy

U2 - 10.1109/BCTM.2014.6981303

DO - 10.1109/BCTM.2014.6981303

M3 - Conference contribution

AN - SCOPUS:84919651088

T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

SP - 151

EP - 154

BT - 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014

Y2 - 28 September 2014 through 1 October 2014

ER -

W-band SiGe power amplifiers

Abstract

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