Voltage switching of a VO2 memory metasurface using ionic gel

M. D. Goldflam; M. K. Liu; B. C. Chapler; H. T. Stinson; A. J. Sternbach; A. S. McLeod; J. D. Zhang; K. Geng; M. Royal; Bong Jun Kim; R. D. Averitt; N. M. Jokerst; D. R. Smith; H. T. Kim; D. N. Basov

doi:10.1063/1.4891765

Voltage switching of a VO₂ memory metasurface using ionic gel

M. D. Goldflam, M. K. Liu, B. C. Chapler, H. T. Stinson, A. J. Sternbach, A. S. McLeod, J. D. Zhang, K. Geng, M. Royal, Bong Jun Kim, R. D. Averitt, N. M. Jokerst, D. R. Smith, H. T. Kim, D. N. Basov

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Abstract

We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO₂) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO₂ layer. Positive and negative voltage application can selectively tune the metasurface resonance into the "off" or "on" state by pushing the VO₂ into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO₂ based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte-VO₂ interface.

Original language	English (US)
Article number	041117
Journal	Applied Physics Letters
Volume	105
Issue number	4
DOIs	https://doi.org/10.1063/1.4891765
State	Published - Jul 28 2014
Externally published	Yes

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title = "Voltage switching of a VO2 memory metasurface using ionic gel",

abstract = "We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO2 layer. Positive and negative voltage application can selectively tune the metasurface resonance into the {"}off{"} or {"}on{"} state by pushing the VO2 into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO2 based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte-VO2 interface.",

author = "Goldflam, \{M. D.\} and Liu, \{M. K.\} and Chapler, \{B. C.\} and Stinson, \{H. T.\} and Sternbach, \{A. J.\} and McLeod, \{A. S.\} and Zhang, \{J. D.\} and K. Geng and M. Royal and Kim, \{Bong Jun\} and Averitt, \{R. D.\} and Jokerst, \{N. M.\} and Smith, \{D. R.\} and Kim, \{H. T.\} and Basov, \{D. N.\}",

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doi = "10.1063/1.4891765",

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AU - Goldflam, M. D.

AU - Liu, M. K.

AU - Chapler, B. C.

AU - Stinson, H. T.

AU - Sternbach, A. J.

AU - McLeod, A. S.

AU - Zhang, J. D.

AU - Geng, K.

AU - Royal, M.

AU - Kim, Bong Jun

AU - Averitt, R. D.

AU - Jokerst, N. M.

AU - Smith, D. R.

AU - Kim, H. T.

AU - Basov, D. N.

PY - 2014/7/28

Y1 - 2014/7/28

N2 - We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO2 layer. Positive and negative voltage application can selectively tune the metasurface resonance into the "off" or "on" state by pushing the VO2 into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO2 based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte-VO2 interface.

AB - We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO2 layer. Positive and negative voltage application can selectively tune the metasurface resonance into the "off" or "on" state by pushing the VO2 into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO2 based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte-VO2 interface.

UR - https://www.scopus.com/pages/publications/84905366851

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DO - 10.1063/1.4891765

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VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041117

ER -

Voltage switching of a VO₂ memory metasurface using ionic gel

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