Voltage switching of a VO2 memory metasurface using ionic gel

M. D. Goldflam, M. K. Liu, B. C. Chapler, H. T. Stinson, A. J. Sternbach, A. S. McLeod, J. D. Zhang, K. Geng, M. Royal, Bong Jun Kim, R. D. Averitt, N. M. Jokerst, D. R. Smith, H. T. Kim, D. N. Basov

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO2 layer. Positive and negative voltage application can selectively tune the metasurface resonance into the "off" or "on" state by pushing the VO2 into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO2 based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte-VO2 interface.

Original languageEnglish (US)
Article number041117
JournalApplied Physics Letters
Volume105
Issue number4
DOIs
StatePublished - Jul 28 2014
Externally publishedYes

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