Voltage Distributions in X-Band n+-n-n+ Gunn Devices Using a SEM

Philip John Fentem; Anand Gopinath

doi:10.1109/T-ED.1976.18562

Voltage Distributions in X-Band n⁺-n-n⁺ Gunn Devices Using a SEM

Philip John Fentem
, Anand Gopinath

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The SEM has been used as a voltage measuring probe to obtain voltage distributions in X-band n⁺-n-n⁺ mesa structure Gunn devices. Dynamic distributions are obtained by operating the instrument in the stroboscopc mode. The results show accumulation layers in the oscillating device and the amplifier mode has a high field anode region.

Original language	English (US)
Pages (from-to)	1159-1165
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	23
Issue number	10
DOIs	https://doi.org/10.1109/T-ED.1976.18562
State	Published - Oct 1976

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10.1109/T-ED.1976.18562

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@article{da08840fae714207b91c464ca2378f3f,

title = "Voltage Distributions in X-Band n+-n-n+ Gunn Devices Using a SEM",

abstract = "The SEM has been used as a voltage measuring probe to obtain voltage distributions in X-band n+-n-n+ mesa structure Gunn devices. Dynamic distributions are obtained by operating the instrument in the stroboscopc mode. The results show accumulation layers in the oscillating device and the amplifier mode has a high field anode region.",

author = "Fentem, \{Philip John\} and Anand Gopinath",

year = "1976",

month = oct,

doi = "10.1109/T-ED.1976.18562",

language = "English (US)",

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pages = "1159--1165",

journal = "IEEE Transactions on Electron Devices",

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T1 - Voltage Distributions in X-Band n+-n-n+ Gunn Devices Using a SEM

AU - Fentem, Philip John

AU - Gopinath, Anand

PY - 1976/10

Y1 - 1976/10

N2 - The SEM has been used as a voltage measuring probe to obtain voltage distributions in X-band n+-n-n+ mesa structure Gunn devices. Dynamic distributions are obtained by operating the instrument in the stroboscopc mode. The results show accumulation layers in the oscillating device and the amplifier mode has a high field anode region.

AB - The SEM has been used as a voltage measuring probe to obtain voltage distributions in X-band n+-n-n+ mesa structure Gunn devices. Dynamic distributions are obtained by operating the instrument in the stroboscopc mode. The results show accumulation layers in the oscillating device and the amplifier mode has a high field anode region.

UR - https://www.scopus.com/pages/publications/0017009545

UR - https://www.scopus.com/pages/publications/0017009545#tab=citedBy

U2 - 10.1109/T-ED.1976.18562

DO - 10.1109/T-ED.1976.18562

M3 - Article

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SP - 1159

EP - 1165

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Voltage Distributions in X-Band n⁺-n-n⁺ Gunn Devices Using a SEM

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