Voltage Distributions in X-Band n+-n-n+ Gunn Devices Using a SEM

Philip John Fentem, Anand Gopinath

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The SEM has been used as a voltage measuring probe to obtain voltage distributions in X-band n+-n-n+ mesa structure Gunn devices. Dynamic distributions are obtained by operating the instrument in the stroboscopc mode. The results show accumulation layers in the oscillating device and the amplifier mode has a high field anode region.

Original languageEnglish (US)
Pages (from-to)1159-1165
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume23
Issue number10
DOIs
StatePublished - Oct 1976

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