Voltage Distribution in N+-N-N+ and Metal-Cathode N-N+ GaAs X-Band Oscillators using a Sem

W. John Tee; Stuart G. Farquhar; A. Gopinath

doi:10.1109/T-ED.1978.19150

Voltage Distribution in N+-N-N+ and Metal-Cathode N-N+ GaAs X-Band Oscillators using a Sem

W. John Tee, Stuart G. Farquhar, A. Gopinath

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Time-averaged and dynamic results have been obtained in n+-n-n+ and metal cathode n-n+ GaAs X-band devices, using a new volt-age measurement scheme in the SEM. The n+-n-n+ devices show accumulation layer propagation, and the metal-cathode devices showa trapped dipole domain behavior.

Original language	English (US)
Pages (from-to)	655-659
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	25
Issue number	6
DOIs	https://doi.org/10.1109/T-ED.1978.19150
State	Published - Jun 1978

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10.1109/T-ED.1978.19150

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title = "Voltage Distribution in N+-N-N+ and Metal-Cathode N-N+ GaAs X-Band Oscillators using a Sem",

abstract = "Time-averaged and dynamic results have been obtained in n+-n-n+ and metal cathode n-n+ GaAs X-band devices, using a new volt-age measurement scheme in the SEM. The n+-n-n+ devices show accumulation layer propagation, and the metal-cathode devices showa trapped dipole domain behavior.",

author = "Tee, {W. John} and Farquhar, {Stuart G.} and A. Gopinath",

year = "1978",

month = jun,

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AU - Farquhar, Stuart G.

AU - Gopinath, A.

PY - 1978/6

Y1 - 1978/6

N2 - Time-averaged and dynamic results have been obtained in n+-n-n+ and metal cathode n-n+ GaAs X-band devices, using a new volt-age measurement scheme in the SEM. The n+-n-n+ devices show accumulation layer propagation, and the metal-cathode devices showa trapped dipole domain behavior.

AB - Time-averaged and dynamic results have been obtained in n+-n-n+ and metal cathode n-n+ GaAs X-band devices, using a new volt-age measurement scheme in the SEM. The n+-n-n+ devices show accumulation layer propagation, and the metal-cathode devices showa trapped dipole domain behavior.

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Voltage Distribution in N+-N-N+ and Metal-Cathode N-N+ GaAs X-Band Oscillators using a Sem

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