Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system

Keyphrases

• Ferromagnet 100%
• Room Temperature 100%
• Exchange Bias 100%
• Voltage Control 100%
• Antiferromagnetic Order 100%
• Nanoelectronics 100%
• Multiferroics 100%
• Directional Anisotropy 100%
• Ultra-low Energy 100%
• Ferroelectric Order 100%
• BiFeO3 100%
• Fabrication Methods 50%
• Non-volatile 50%
• Switching Mechanism 50%
• Exchange-coupled 50%
• Magnetic Moment 50%
• Exchange Coupling 50%
• Continual Improvement 50%
• Exchange Interaction 50%
• Spin Valve 50%
• La0.7Sr0.3MnO3 50%
• Beyond CMOS 50%
• Complementary Metal Oxide Semiconductor 50%
• Uniaxial Anisotropy 50%
• Switching Energy 50%
• Energy Switching 50%
• Computing Element 50%
• Voltage Modulation 50%
• Electric Field Control 50%
• Electrically Controlled 50%
• Magnetoelectricity 50%
• Electric Field (E-field) 50%
• Computing Devices 50%
• Memory Technologies 50%
• Logic Technology 50%

Material Science

• Ferroelectric Material 100%
• Anisotropy 100%
• Multiferroic Material 100%
• Bismuth Ferrite 66%
• Complementary Metal-Oxide-Semiconductor Device 33%