Visualizing the evolution of surface bond straining during radical-surface interactions in plasma deposition processes

Saravanapriyan Sriraman, Eray S. Aydil, Dimitrios Maroudas

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Fundamental understanding of radical-surface interactions during plasma deposition of Si thin films is essential for developing rational deposition strategies. We have developed a visualization tool for monitoring the surface bond strain evolution during film growth. This tool is used to examine the local structural changes in the vicinity of the growth surface when a chemical reaction occurs during molecular-dynamics (MD) simulations of Si thin-film deposition and aids in the analysis of radical-surface interactions. Results are presented for the surface bond strain distribution when an SiH3 radical inserts into an Si-Si dimer on an H-terminated Si(001)-(2 × 1) surface during the initial stage of deposition. This type of analysis is particularly helpful in understanding the reactions and migration of the SiH3 radical on the surface of plasma-deposited hydrogenated amorphous Si films.

Original languageEnglish (US)
Pages (from-to)112-113
Number of pages2
JournalIEEE Transactions on Plasma Science
Issue number1 I
StatePublished - Feb 2002

Bibliographical note

Funding Information:
Manuscript received June 19, 2001; revised September 17, 2001. This work was supported by the NSF/DoE Partnership for Plasma Science and Engineering under awards DMR-9713280 and ECS-0078711, and by the Camille & Henry Dreyfus Foundation through Camille Dreyfus Teacher–Scholar Awards to E. Aydil and D. Maroudas.


  • Amorphous silicon
  • Bond strain
  • Molecular dynamics
  • Plasma CVD
  • Radical-surface interactions
  • Silane
  • Surface relaxation


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