Visualizing radical-surface interactions in plasma deposition processes: reactivity of SiH3 radicals with Si surfaces

Shyam Ramalingam; Dimitrios Maroudas; Eray S. Aydil

doi:10.1109/27.763067

Visualizing radical-surface interactions in plasma deposition processes: reactivity of SiH₃ radicals with Si surfaces

Shyam Ramalingam, Dimitrios Maroudas, Eray S. Aydil

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

There is a need for improving our fundamental understanding of the radical surface interactions during plasma enhanced chemical vapor deposition of Si. Toward this goal, we have calculated the interaction energy between SiH₃ radicals and various Si surfaces, and mapped the changes in this energy as a function of position on the surface. Application of this analysis to the SiH₃ radical impinging on a variety of Si surfaces, coupled with detailed investigation of the radical impingement dynamics, proved valuable in understanding and visualizing the driving forces that determine the nature of the radical-surface interactions during plasma deposition of Si.

Original language	English (US)
Pages (from-to)	104-105
Number of pages	2
Journal	IEEE Transactions on Plasma Science
Volume	27
Issue number	1
DOIs	https://doi.org/10.1109/27.763067
State	Published - 1999

Bibliographical note

Funding Information:
Manuscript received July 1, 1998; revised November 23, 1998. This work was supported by the Universities Space Research Association (Award 8006-001-02) and by the NSF/DOE Partnership for Plasma Science and Engineering Award (DMR 97-13280).

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10.1109/27.763067

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abstract = "There is a need for improving our fundamental understanding of the radical surface interactions during plasma enhanced chemical vapor deposition of Si. Toward this goal, we have calculated the interaction energy between SiH3 radicals and various Si surfaces, and mapped the changes in this energy as a function of position on the surface. Application of this analysis to the SiH3 radical impinging on a variety of Si surfaces, coupled with detailed investigation of the radical impingement dynamics, proved valuable in understanding and visualizing the driving forces that determine the nature of the radical-surface interactions during plasma deposition of Si.",

author = "Shyam Ramalingam and Dimitrios Maroudas and Aydil, {Eray S.}",

note = "Funding Information: Manuscript received July 1, 1998; revised November 23, 1998. This work was supported by the Universities Space Research Association (Award 8006-001-02) and by the NSF/DOE Partnership for Plasma Science and Engineering Award (DMR 97-13280).",

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