There is a need for improving our fundamental understanding of the radical surface interactions during plasma enhanced chemical vapor deposition of Si. Toward this goal, we have calculated the interaction energy between SiH3 radicals and various Si surfaces, and mapped the changes in this energy as a function of position on the surface. Application of this analysis to the SiH3 radical impinging on a variety of Si surfaces, coupled with detailed investigation of the radical impingement dynamics, proved valuable in understanding and visualizing the driving forces that determine the nature of the radical-surface interactions during plasma deposition of Si.
Bibliographical noteFunding Information:
Manuscript received July 1, 1998; revised November 23, 1998. This work was supported by the Universities Space Research Association (Award 8006-001-02) and by the NSF/DOE Partnership for Plasma Science and Engineering Award (DMR 97-13280).