Visible luminescence from nanocrystalline silicon films produced by plasma enhanced chemical vapor deposition

Erik Edelberg; Sam Bergh; Ryan Naone; Michael Hall; Eray S. Aydil

doi:10.1063/1.116098

Visible luminescence from nanocrystalline silicon films produced by plasma enhanced chemical vapor deposition

Erik Edelberg, Sam Bergh, Ryan Naone, Michael Hall, Eray S. Aydil

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

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Abstract

Thin nanocrystalline silicon (nc-Si) films deposited by plasma enhanced chemical vapor deposition (PECVD) exhibited room-temperature photoluminescence in the visible range of the electromagnetic spectrum. High resolution transmission electron microscopy revealed that the films are made of Si crystals with dimensions 2-15 nm. The photoluminescence spectra of the nc-Si films were similar to the spectra observed from porous silicon produced by anodization and electrochemical dissolution of crystalline Si. This similarity suggests that the luminescence mechanism of nc-Si films is similar to the mechanism of light emission from porous silicon. The ability to manufacture luminescent Si films by methods which are compatible with the current Si based technology, such as PECVD, can provide new possibilities in the realization of optoelectronic devices.

Original language	English (US)
Pages (from-to)	1415-1417
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	10
DOIs	https://doi.org/10.1063/1.116098
State	Published - 1996

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title = "Visible luminescence from nanocrystalline silicon films produced by plasma enhanced chemical vapor deposition",

abstract = "Thin nanocrystalline silicon (nc-Si) films deposited by plasma enhanced chemical vapor deposition (PECVD) exhibited room-temperature photoluminescence in the visible range of the electromagnetic spectrum. High resolution transmission electron microscopy revealed that the films are made of Si crystals with dimensions 2-15 nm. The photoluminescence spectra of the nc-Si films were similar to the spectra observed from porous silicon produced by anodization and electrochemical dissolution of crystalline Si. This similarity suggests that the luminescence mechanism of nc-Si films is similar to the mechanism of light emission from porous silicon. The ability to manufacture luminescent Si films by methods which are compatible with the current Si based technology, such as PECVD, can provide new possibilities in the realization of optoelectronic devices.",

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T1 - Visible luminescence from nanocrystalline silicon films produced by plasma enhanced chemical vapor deposition

AU - Edelberg, Erik

AU - Bergh, Sam

AU - Naone, Ryan

AU - Hall, Michael

AU - Aydil, Eray S.

PY - 1996

Y1 - 1996

N2 - Thin nanocrystalline silicon (nc-Si) films deposited by plasma enhanced chemical vapor deposition (PECVD) exhibited room-temperature photoluminescence in the visible range of the electromagnetic spectrum. High resolution transmission electron microscopy revealed that the films are made of Si crystals with dimensions 2-15 nm. The photoluminescence spectra of the nc-Si films were similar to the spectra observed from porous silicon produced by anodization and electrochemical dissolution of crystalline Si. This similarity suggests that the luminescence mechanism of nc-Si films is similar to the mechanism of light emission from porous silicon. The ability to manufacture luminescent Si films by methods which are compatible with the current Si based technology, such as PECVD, can provide new possibilities in the realization of optoelectronic devices.

AB - Thin nanocrystalline silicon (nc-Si) films deposited by plasma enhanced chemical vapor deposition (PECVD) exhibited room-temperature photoluminescence in the visible range of the electromagnetic spectrum. High resolution transmission electron microscopy revealed that the films are made of Si crystals with dimensions 2-15 nm. The photoluminescence spectra of the nc-Si films were similar to the spectra observed from porous silicon produced by anodization and electrochemical dissolution of crystalline Si. This similarity suggests that the luminescence mechanism of nc-Si films is similar to the mechanism of light emission from porous silicon. The ability to manufacture luminescent Si films by methods which are compatible with the current Si based technology, such as PECVD, can provide new possibilities in the realization of optoelectronic devices.

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Visible luminescence from nanocrystalline silicon films produced by plasma enhanced chemical vapor deposition

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