TY - GEN
T1 - Virtual metrology modeling for plasma etch operations
AU - Zeng, Dekong
AU - Spanos, Costas J.
AU - Tan, Yajing
AU - Wang, Tzu Yu
AU - Lin, Chun Hsien
AU - Lo, Henry
AU - Wang, Jean
AU - Yu, C. H.
PY - 2008
Y1 - 2008
N2 - The objective of this paper is to present the utilization of information produced during plasma etching for the prediction of etch bias. A plasma etching process typically relies on the concentration of chemical species in reaction chambers over time, where each concentration depends on chamber pressure, gas flow rate, power level and other chamber and wafer properties. Plasma properties, as well as equipment factors are nonlinear and vary over time. In this work, we will use various statistical techniques to address challenges due to the nature of plasma data: high dimensionality, collinearity, overall non-linearity of system, variation of data structure due to equipment condition changing, etc.
AB - The objective of this paper is to present the utilization of information produced during plasma etching for the prediction of etch bias. A plasma etching process typically relies on the concentration of chemical species in reaction chambers over time, where each concentration depends on chamber pressure, gas flow rate, power level and other chamber and wafer properties. Plasma properties, as well as equipment factors are nonlinear and vary over time. In this work, we will use various statistical techniques to address challenges due to the nature of plasma data: high dimensionality, collinearity, overall non-linearity of system, variation of data structure due to equipment condition changing, etc.
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M3 - Conference contribution
AN - SCOPUS:79952551444
SN - 9784990413828
T3 - IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
SP - 269
EP - 272
BT - 2008 International Symposium on Semiconductor Manufacturing, ISSM 2008
T2 - 2008 17th International Symposium on Semiconductor Manufacturing, ISSM 2008
Y2 - 27 October 2008 through 29 October 2008
ER -