VIA-1 The Switching Mechanism in the Heterostructure Hot-Electron Diode

T. K. Higman; J. M. Higman; M. A. Emanuel; K. Hess; J. J. Coleman; J. Kolodzey

doi:10.1109/T-ED.1987.23309

VIA-1 The Switching Mechanism in the Heterostructure Hot-Electron Diode

T. K. Higman, J. M. Higman, M. A. Emanuel, K. Hess, J. J. Coleman, J. Kolodzey

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	2381
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	34
Issue number	11
DOIs	https://doi.org/10.1109/T-ED.1987.23309
State	Published - Nov 1987

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10.1109/T-ED.1987.23309

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@article{4d0913ab00174da1920e6fb03a2c8be9,

title = "VIA-1 The Switching Mechanism in the Heterostructure Hot-Electron Diode",

author = "Higman, {T. K.} and Higman, {J. M.} and Emanuel, {M. A.} and K. Hess and Coleman, {J. J.} and J. Kolodzey",

year = "1987",

month = nov,

doi = "10.1109/T-ED.1987.23309",

language = "English (US)",

volume = "34",

pages = "2381",

journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - VIA-1 The Switching Mechanism in the Heterostructure Hot-Electron Diode

AU - Higman, T. K.

AU - Higman, J. M.

AU - Emanuel, M. A.

AU - Hess, K.

AU - Coleman, J. J.

AU - Kolodzey, J.

PY - 1987/11

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U2 - 10.1109/T-ED.1987.23309

DO - 10.1109/T-ED.1987.23309

M3 - Article

AN - SCOPUS:84941435056

SN - 0018-9383

VL - 34

SP - 2381

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -

VIA-1 The Switching Mechanism in the Heterostructure Hot-Electron Diode

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