Very low 1/f barrier noise in sputtered MgO magnetic tunnel junctions with high tunneling magnetoresistance

J. F. Feng; J. Y. Chen; H. Kurt; J. M D Coey

doi:10.1063/1.4769805

Very low 1/f barrier noise in sputtered MgO magnetic tunnel junctions with high tunneling magnetoresistance

J. F. Feng
, J. Y. Chen
, H. Kurt
, J. M D Coey

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Low frequency 1/f barrier noise has been investigated in sputtered MgO magnetic tunnel junctions (MTJs) with a tunneling magnetoresistance ratio of up to 330% at room temperature. The lowest normalized noise parameter α of the tunnel barrier reaches 2.5 × 10^-12-2.1 × 10 ^-11 μm², which is comparable to that found in MTJs with the MgO barrier grown by MBE or electron-beam evaporation. This normalized barrier noise is almost bias independent in the voltage range of up to ±1.2 V. The low noise level and high voltage stability may reflect the high quality of the sputtered MgO with a uniform distribution of defects in the MgO layer.

Original language	English (US)
Article number	123907
Journal	Journal of Applied Physics
Volume	112
Issue number	12
DOIs	https://doi.org/10.1063/1.4769805
State	Published - Dec 15 2012

Bibliographical note

Funding Information:
JFF thanks Z. Diao for useful discussions. This work was supported by SFI as part of the MANSE Project No. 2005/IN/1850 and was conducted under the framework of the INSPIRE program, funded by the Irish Government's Program for Research in Third Level Institutions, Cycle 4, National Development Plan 2007–2013.

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title = "Very low 1/f barrier noise in sputtered MgO magnetic tunnel junctions with high tunneling magnetoresistance",

abstract = "Low frequency 1/f barrier noise has been investigated in sputtered MgO magnetic tunnel junctions (MTJs) with a tunneling magnetoresistance ratio of up to 330\% at room temperature. The lowest normalized noise parameter α of the tunnel barrier reaches 2.5 {\texttimes} 10-12-2.1 {\texttimes} 10 -11 μm2, which is comparable to that found in MTJs with the MgO barrier grown by MBE or electron-beam evaporation. This normalized barrier noise is almost bias independent in the voltage range of up to ±1.2 V. The low noise level and high voltage stability may reflect the high quality of the sputtered MgO with a uniform distribution of defects in the MgO layer.",

author = "Feng, \{J. F.\} and Chen, \{J. Y.\} and H. Kurt and Coey, \{J. M D\}",

note = "Funding Information: JFF thanks Z. Diao for useful discussions. This work was supported by SFI as part of the MANSE Project No. 2005/IN/1850 and was conducted under the framework of the INSPIRE program, funded by the Irish Government's Program for Research in Third Level Institutions, Cycle 4, National Development Plan 2007{\textendash}2013.",

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AU - Kurt, H.

AU - Coey, J. M D

N1 - Funding Information: JFF thanks Z. Diao for useful discussions. This work was supported by SFI as part of the MANSE Project No. 2005/IN/1850 and was conducted under the framework of the INSPIRE program, funded by the Irish Government's Program for Research in Third Level Institutions, Cycle 4, National Development Plan 2007–2013.

PY - 2012/12/15

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N2 - Low frequency 1/f barrier noise has been investigated in sputtered MgO magnetic tunnel junctions (MTJs) with a tunneling magnetoresistance ratio of up to 330% at room temperature. The lowest normalized noise parameter α of the tunnel barrier reaches 2.5 × 10-12-2.1 × 10 -11 μm2, which is comparable to that found in MTJs with the MgO barrier grown by MBE or electron-beam evaporation. This normalized barrier noise is almost bias independent in the voltage range of up to ±1.2 V. The low noise level and high voltage stability may reflect the high quality of the sputtered MgO with a uniform distribution of defects in the MgO layer.

AB - Low frequency 1/f barrier noise has been investigated in sputtered MgO magnetic tunnel junctions (MTJs) with a tunneling magnetoresistance ratio of up to 330% at room temperature. The lowest normalized noise parameter α of the tunnel barrier reaches 2.5 × 10-12-2.1 × 10 -11 μm2, which is comparable to that found in MTJs with the MgO barrier grown by MBE or electron-beam evaporation. This normalized barrier noise is almost bias independent in the voltage range of up to ±1.2 V. The low noise level and high voltage stability may reflect the high quality of the sputtered MgO with a uniform distribution of defects in the MgO layer.

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Very low 1/f barrier noise in sputtered MgO magnetic tunnel junctions with high tunneling magnetoresistance

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