Very low 1/f barrier noise in sputtered MgO magnetic tunnel junctions with high tunneling magnetoresistance

J. F. Feng, J. Y. Chen, H. Kurt, J. M D Coey

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Low frequency 1/f barrier noise has been investigated in sputtered MgO magnetic tunnel junctions (MTJs) with a tunneling magnetoresistance ratio of up to 330% at room temperature. The lowest normalized noise parameter α of the tunnel barrier reaches 2.5 × 10-12-2.1 × 10 -11 μm2, which is comparable to that found in MTJs with the MgO barrier grown by MBE or electron-beam evaporation. This normalized barrier noise is almost bias independent in the voltage range of up to ±1.2 V. The low noise level and high voltage stability may reflect the high quality of the sputtered MgO with a uniform distribution of defects in the MgO layer.

Original languageEnglish (US)
Article number123907
JournalJournal of Applied Physics
Volume112
Issue number12
DOIs
StatePublished - Dec 15 2012

Bibliographical note

Funding Information:
JFF thanks Z. Diao for useful discussions. This work was supported by SFI as part of the MANSE Project No. 2005/IN/1850 and was conducted under the framework of the INSPIRE program, funded by the Irish Government's Program for Research in Third Level Institutions, Cycle 4, National Development Plan 2007–2013.

Fingerprint

Dive into the research topics of 'Very low 1/f barrier noise in sputtered MgO magnetic tunnel junctions with high tunneling magnetoresistance'. Together they form a unique fingerprint.

Cite this