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Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates
Nishant Chandra
, Clarence J. Tracy
,
Jeong Hyun Cho
, S. T. Picraux
, Raghuraj Hathwar
, Stephen M. Goodnick
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
4
Scopus citations
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Keyphrases
Acceptor-like Trap
20%
Barrier Height
20%
CMOS Technology
20%
Current-voltage (I-V) Characteristics
20%
Doping Profile
20%
Epitaxy
20%
Fixed Charge
20%
Full Three-dimensional
20%
Ge Nanowires
100%
Ge Substrate
100%
Height Factor
20%
Higher Ideality Factor
20%
I-V Characteristics
20%
Ideality Factor
40%
Integrated Circuits
20%
Nanowire Diameter
20%
Nanowire Surfaces
20%
Nanowires
100%
P-type Doping
40%
Peroxide
20%
Phosphorus P
20%
Rectifying Behavior
40%
Schottky
20%
Schottky Barrier Height
20%
Schottky Contact
20%
Schottky Diode
100%
Shunt Resistance
20%
Si Substrate
100%
Sidewall
40%
Sidewall Doping
20%
Silvaco ATLAS
20%
Thermionic Emission Theory
40%
Three-dimensional numerical Modeling
20%
Tunneling Contact
20%
V-factor
20%
Vapor-liquid-solid
20%
Variable Range
20%
Wall Conduction
20%
Engineering
Barrier Height
11%
Current-Voltage Characteristic
22%
Do Model
11%
Ge Substrate
100%
Ideality Factor
33%
Integrated Circuit
11%
Nanowire
100%
Nanowire Diameter
11%
Numerical Modeling
11%
Range Variable
11%
Schottky Barrier
11%
Schottky Barrier Height
11%
Shunt Resistance
11%
Si Substrate
100%
Side Wall
33%
Tunnel
11%
Material Science
Current-Voltage Characteristic
20%
Electronic Circuit
10%
Epitaxy
10%
Nanowires
100%
Peroxide
10%
Schottky Barrier
20%
Schottky Diode
100%
Surface (Surface Science)
10%