Velocity saturation effect in heterostructure field effect transistors

Keyphrases

• Velocity Saturation 100%
• Modulation-doped Field-effect Transistor (MODFET) 100%
• Saturation Effect 100%
• Heterostructure Field-effect Transistors 100%
• Channel Structure 50%
• Heterostructure 50%
• Ring Oscillator 50%
• Device Structure 50%
• Gate Delay 50%
• Superlattice 50%
• Gate Length 50%
• Charge Transfer 50%
• InGaAs Channel 50%
• Device Performance 50%
• Electron Velocity 50%
• Transconductance 50%
• Heterostructure FET 50%
• Device Operation 50%
• Charge Control Layer 50%
• Gate Leakage 50%
• Self-aligned Top-gate 50%

Engineering

• Field-Effect Transistor 100%
• Saturation Effect 100%
• Heterojunctions 100%
• Field Effect Transistors 66%
• Device Structure 33%
• Gate Length 33%
• Electron Velocity 33%
• Device Performance 33%
• Channel Device 33%
• Indium Gallium Arsenide 33%
• Channel Structure 33%
• Superlattice 33%
• Oscillator 33%