Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors

Reid J. Chesterfield; John C. McKeen; Christopher R. Newman; C. Daniel Frisbie; Paul C. Ewbank; Kent R. Mann; Larry L. Miller

doi:10.1063/1.1710729

Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors

Reid J. Chesterfield
, John C. McKeen
, Christopher R. Newman
, C. Daniel Frisbie
, Paul C. Ewbank
, Kent R. Mann
, Larry L. Miller

Research output: Contribution to journal › Article › peer-review

209 Scopus citations

Abstract

The electrical and structural properties in thin films of an n-channel organic semiconductor, N,N′-dipentyl-3,4,9,10-perylene tetracarboxylic dimide (PTCDI-C ₅), were analyzed. X-ray diffraction and atomic force microscopy were used to analyze the structure of polycrystalline thin films of PTCDI-C ₅. Hydrophobic and hydrophillic substrates were used to synthesize organic thin film transistors (OTFT), which were based on PTCDI-C ₅. It was observed that OTFTs exhibited significant contact resistance, which was characterized by the four-probe and resistance versus length method. In PTCDI-C ₅ OTFTs, the TFT instability of threshold voltage shift (TVS) was found.

Original language	English (US)
Pages (from-to)	6396-6405
Number of pages	10
Journal	Journal of Applied Physics
Volume	95
Issue number	11 I
DOIs	https://doi.org/10.1063/1.1710729
State	Published - Jun 1 2004

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10.1063/1.1710729

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title = "Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors",

abstract = "The electrical and structural properties in thin films of an n-channel organic semiconductor, N,N′-dipentyl-3,4,9,10-perylene tetracarboxylic dimide (PTCDI-C 5), were analyzed. X-ray diffraction and atomic force microscopy were used to analyze the structure of polycrystalline thin films of PTCDI-C 5. Hydrophobic and hydrophillic substrates were used to synthesize organic thin film transistors (OTFT), which were based on PTCDI-C 5. It was observed that OTFTs exhibited significant contact resistance, which was characterized by the four-probe and resistance versus length method. In PTCDI-C 5 OTFTs, the TFT instability of threshold voltage shift (TVS) was found.",

author = "Chesterfield, \{Reid J.\} and McKeen, \{John C.\} and Newman, \{Christopher R.\} and Frisbie, \{C. Daniel\} and Ewbank, \{Paul C.\} and Mann, \{Kent R.\} and Miller, \{Larry L.\}",

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TY - JOUR

T1 - Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors

AU - Chesterfield, Reid J.

AU - McKeen, John C.

AU - Newman, Christopher R.

AU - Frisbie, C. Daniel

AU - Ewbank, Paul C.

AU - Mann, Kent R.

AU - Miller, Larry L.

PY - 2004/6/1

Y1 - 2004/6/1

N2 - The electrical and structural properties in thin films of an n-channel organic semiconductor, N,N′-dipentyl-3,4,9,10-perylene tetracarboxylic dimide (PTCDI-C 5), were analyzed. X-ray diffraction and atomic force microscopy were used to analyze the structure of polycrystalline thin films of PTCDI-C 5. Hydrophobic and hydrophillic substrates were used to synthesize organic thin film transistors (OTFT), which were based on PTCDI-C 5. It was observed that OTFTs exhibited significant contact resistance, which was characterized by the four-probe and resistance versus length method. In PTCDI-C 5 OTFTs, the TFT instability of threshold voltage shift (TVS) was found.

AB - The electrical and structural properties in thin films of an n-channel organic semiconductor, N,N′-dipentyl-3,4,9,10-perylene tetracarboxylic dimide (PTCDI-C 5), were analyzed. X-ray diffraction and atomic force microscopy were used to analyze the structure of polycrystalline thin films of PTCDI-C 5. Hydrophobic and hydrophillic substrates were used to synthesize organic thin film transistors (OTFT), which were based on PTCDI-C 5. It was observed that OTFTs exhibited significant contact resistance, which was characterized by the four-probe and resistance versus length method. In PTCDI-C 5 OTFTs, the TFT instability of threshold voltage shift (TVS) was found.

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U2 - 10.1063/1.1710729

DO - 10.1063/1.1710729

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11 I

ER -

Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors

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