Variable range hopping in doped crystalline semiconductors

A. L. Efros, Nguyen Van Lien, B. I. Shklovskii

Research output: Contribution to journalArticlepeer-review

49 Scopus citations


The computer simulation is made to determine the temperature dependence of the hopping conductivity in the variable range hopping regime. It is found to obey the equation (1) rather than the Mott law. A simple analytical procedure is proposed which fits well the results of simulation.

Original languageEnglish (US)
Pages (from-to)851-854
Number of pages4
JournalSolid State Communications
Issue number10
StatePublished - Dec 1979


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