Valence band alignment at CdSe quantum dot and ZnO (101bar0) interfaces

Brooke A. Carlson; Kurtis Leschkies; Eray Aydil; Xiaoyang Zhu

Valence band alignment at CdSe quantum dot and ZnO (101bar0) interfaces

Brooke A. Carlson
, Kurtis Leschkies
, Eray Aydil
, Xiaoyang Zhu

Chemical Engineering and Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Nanostructured semiconductors, such as CdSe and ZnO, are important materials under study for use in next-generation photovoltaic technology. A key issue governing efficient electron transfer between two semiconductors is interfacial energetic alignment. We explore this issue in a model system, CdSe quantum dots adsorbed on single crystal ZnO(101bar0) surface via molecular linkers, using ultraviolet photoelectron spectroscopy. The valence band maximum (VBM) of the CdSe quantum dots is found to be located at 1.1±0.1 eV above the VBM of ZnO, independent of the size of the quantum dots (2.2-4.2 nm). This finding suggests that there is direct electronic interaction between the quantum dot and the surface that is mediated by occupied states, such that the valence bands are pinned to the Fermi level.

Original language	English (US)
Title of host publication	American Chemical Society - 235th National Meeting, Abstracts of Scientific Papers
State	Published - 2008
Event	235th National Meeting of the American Chemical Society, ACS 2008 - New Orleans, LA, United States Duration: Apr 6 2008 → Apr 10 2008

Publication series

Name	ACS National Meeting Book of Abstracts
ISSN (Print)	0065-7727

Other

Other	235th National Meeting of the American Chemical Society, ACS 2008
Country/Territory	United States
City	New Orleans, LA
Period	4/6/08 → 4/10/08

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@inproceedings{6b8058202b8e4694975561428fc09d50,

title = "Valence band alignment at CdSe quantum dot and ZnO (101bar0) interfaces",

abstract = "Nanostructured semiconductors, such as CdSe and ZnO, are important materials under study for use in next-generation photovoltaic technology. A key issue governing efficient electron transfer between two semiconductors is interfacial energetic alignment. We explore this issue in a model system, CdSe quantum dots adsorbed on single crystal ZnO(101bar0) surface via molecular linkers, using ultraviolet photoelectron spectroscopy. The valence band maximum (VBM) of the CdSe quantum dots is found to be located at 1.1±0.1 eV above the VBM of ZnO, independent of the size of the quantum dots (2.2-4.2 nm). This finding suggests that there is direct electronic interaction between the quantum dot and the surface that is mediated by occupied states, such that the valence bands are pinned to the Fermi level.",

author = "Carlson, \{Brooke A.\} and Kurtis Leschkies and Eray Aydil and Xiaoyang Zhu",

year = "2008",

language = "English (US)",

isbn = "9780841269859",

series = "ACS National Meeting Book of Abstracts",

booktitle = "American Chemical Society - 235th National Meeting, Abstracts of Scientific Papers",

note = "235th National Meeting of the American Chemical Society, ACS 2008 ; Conference date: 06-04-2008 Through 10-04-2008",

}

TY - GEN

T1 - Valence band alignment at CdSe quantum dot and ZnO (101bar0) interfaces

AU - Carlson, Brooke A.

AU - Leschkies, Kurtis

AU - Aydil, Eray

AU - Zhu, Xiaoyang

PY - 2008

Y1 - 2008

N2 - Nanostructured semiconductors, such as CdSe and ZnO, are important materials under study for use in next-generation photovoltaic technology. A key issue governing efficient electron transfer between two semiconductors is interfacial energetic alignment. We explore this issue in a model system, CdSe quantum dots adsorbed on single crystal ZnO(101bar0) surface via molecular linkers, using ultraviolet photoelectron spectroscopy. The valence band maximum (VBM) of the CdSe quantum dots is found to be located at 1.1±0.1 eV above the VBM of ZnO, independent of the size of the quantum dots (2.2-4.2 nm). This finding suggests that there is direct electronic interaction between the quantum dot and the surface that is mediated by occupied states, such that the valence bands are pinned to the Fermi level.

AB - Nanostructured semiconductors, such as CdSe and ZnO, are important materials under study for use in next-generation photovoltaic technology. A key issue governing efficient electron transfer between two semiconductors is interfacial energetic alignment. We explore this issue in a model system, CdSe quantum dots adsorbed on single crystal ZnO(101bar0) surface via molecular linkers, using ultraviolet photoelectron spectroscopy. The valence band maximum (VBM) of the CdSe quantum dots is found to be located at 1.1±0.1 eV above the VBM of ZnO, independent of the size of the quantum dots (2.2-4.2 nm). This finding suggests that there is direct electronic interaction between the quantum dot and the surface that is mediated by occupied states, such that the valence bands are pinned to the Fermi level.

UR - https://www.scopus.com/pages/publications/77955593372

UR - https://www.scopus.com/pages/publications/77955593372#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:77955593372

SN - 9780841269859

T3 - ACS National Meeting Book of Abstracts

BT - American Chemical Society - 235th National Meeting, Abstracts of Scientific Papers

T2 - 235th National Meeting of the American Chemical Society, ACS 2008

Y2 - 6 April 2008 through 10 April 2008

ER -

Valence band alignment at CdSe quantum dot and ZnO (101bar0) interfaces

Abstract

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