Valence band alignment at CdSe quantum dot and ZnO (101bar0) interfaces

Brooke A. Carlson, Kurtis Leschkies, Eray Aydil, Xiaoyang Zhu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nanostructured semiconductors, such as CdSe and ZnO, are important materials under study for use in next-generation photovoltaic technology. A key issue governing efficient electron transfer between two semiconductors is interfacial energetic alignment. We explore this issue in a model system, CdSe quantum dots adsorbed on single crystal ZnO(101bar0) surface via molecular linkers, using ultraviolet photoelectron spectroscopy. The valence band maximum (VBM) of the CdSe quantum dots is found to be located at 1.1±0.1 eV above the VBM of ZnO, independent of the size of the quantum dots (2.2-4.2 nm). This finding suggests that there is direct electronic interaction between the quantum dot and the surface that is mediated by occupied states, such that the valence bands are pinned to the Fermi level.

Original languageEnglish (US)
Title of host publicationAmerican Chemical Society - 235th National Meeting, Abstracts of Scientific Papers
StatePublished - Dec 1 2008
Event235th National Meeting of the American Chemical Society, ACS 2008 - New Orleans, LA, United States
Duration: Apr 6 2008Apr 10 2008

Publication series

NameACS National Meeting Book of Abstracts
ISSN (Print)0065-7727

Other

Other235th National Meeting of the American Chemical Society, ACS 2008
CountryUnited States
CityNew Orleans, LA
Period4/6/084/10/08

Fingerprint Dive into the research topics of 'Valence band alignment at CdSe quantum dot and ZnO (101bar0) interfaces'. Together they form a unique fingerprint.

  • Cite this

    Carlson, B. A., Leschkies, K., Aydil, E., & Zhu, X. (2008). Valence band alignment at CdSe quantum dot and ZnO (101bar0) interfaces. In American Chemical Society - 235th National Meeting, Abstracts of Scientific Papers (ACS National Meeting Book of Abstracts).