UV and air stability of high-efficiency photoluminescent silicon nanocrystals

Jihua Yang; Richard Liptak; David Rowe; Jeslin Wu; James Casey; David Witker; Stephen A Campbell; Uwe Kortshagen

doi:10.1016/j.apsusc.2014.08.027

UV and air stability of high-efficiency photoluminescent silicon nanocrystals

Jihua Yang, Richard Liptak, David Rowe, Jeslin Wu, James Casey, David Witker, Stephen A Campbell, Uwe Kortshagen

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.

Original language	English (US)
Pages (from-to)	54-58
Number of pages	5
Journal	Applied Surface Science
Volume	323
DOIs	https://doi.org/10.1016/j.apsusc.2014.08.027
State	Published - Dec 30 2014

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© 2014 Elsevier B.V. All rights reserved.

Keywords

Nonthermal plasma
Phosphorous (P) doping
Photoluminescence quantum yield
Silicon nanocrystals
UV stability

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "UV and air stability of high-efficiency photoluminescent silicon nanocrystals",

abstract = "The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.",

keywords = "Nonthermal plasma, Phosphorous (P) doping, Photoluminescence quantum yield, Silicon nanocrystals, UV stability",

author = "Jihua Yang and Richard Liptak and David Rowe and Jeslin Wu and James Casey and David Witker and Campbell, {Stephen A} and Uwe Kortshagen",

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doi = "10.1016/j.apsusc.2014.08.027",

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T1 - UV and air stability of high-efficiency photoluminescent silicon nanocrystals

AU - Yang, Jihua

AU - Liptak, Richard

AU - Rowe, David

AU - Wu, Jeslin

AU - Casey, James

AU - Witker, David

AU - Campbell, Stephen A

AU - Kortshagen, Uwe

PY - 2014/12/30

Y1 - 2014/12/30

N2 - The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.

AB - The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.

KW - Nonthermal plasma

KW - Phosphorous (P) doping

KW - Photoluminescence quantum yield

KW - Silicon nanocrystals

KW - UV stability

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DO - 10.1016/j.apsusc.2014.08.027

M3 - Article

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SN - 0169-4332

VL - 323

SP - 54

EP - 58

JO - Applied Surface Science

JF - Applied Surface Science

ER -

UV and air stability of high-efficiency photoluminescent silicon nanocrystals

Abstract

Bibliographical note

Keywords

UN SDGs

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