UV and air stability of high-efficiency photoluminescent silicon nanocrystals

Jihua Yang, Richard Liptak, David Rowe, Jeslin Wu, James Casey, David Witker, Stephen A. Campbell, Uwe Kortshagen

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.

Original languageEnglish (US)
Pages (from-to)54-58
Number of pages5
JournalApplied Surface Science
Volume323
DOIs
StatePublished - Dec 30 2014

Keywords

  • Nonthermal plasma
  • Phosphorous (P) doping
  • Photoluminescence quantum yield
  • Silicon nanocrystals
  • UV stability

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