UV and air stability of high-efficiency photoluminescent silicon nanocrystals

Jihua Yang, Richard Liptak, David Rowe, Jeslin Wu, James Casey, David Witker, Stephen A. Campbell, Uwe Kortshagen

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.

Original languageEnglish (US)
Pages (from-to)54-58
Number of pages5
JournalApplied Surface Science
StatePublished - Dec 30 2014

Bibliographical note

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.


  • Nonthermal plasma
  • Phosphorous (P) doping
  • Photoluminescence quantum yield
  • Silicon nanocrystals
  • UV stability


Dive into the research topics of 'UV and air stability of high-efficiency photoluminescent silicon nanocrystals'. Together they form a unique fingerprint.

Cite this