Utilizing reverse short-channel effect for optimal subthreshold circuit design

Tae Hyoung Kim, John Keane, Hanyong Eom, Chris H. Kim

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device-size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, better subthreshold swing, and improved energy dissipation. Simulation results using ISCAS benchmark circuits show that the critical path delay, power consumption, and energy consumption can be improved by up to 10.4%, 34.4%, and 41.2%, respectively.

Original languageEnglish (US)
Pages (from-to)821-828
Number of pages8
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume15
Issue number7
DOIs
StatePublished - Jul 1 2007

Keywords

  • Circuit optimization
  • Process variation
  • Reverse short-channel effect (RSCE)
  • Subthreshold operation

Fingerprint Dive into the research topics of 'Utilizing reverse short-channel effect for optimal subthreshold circuit design'. Together they form a unique fingerprint.

Cite this