Utilizing reverse short-channel effect for optimal subthreshold circuit design

Tae Hyoung Kim; John Keane; Hanyong Eom; Chris H. Kim

doi:10.1109/TVLSI.2007.899239

Utilizing reverse short-channel effect for optimal subthreshold circuit design

Tae Hyoung Kim, John Keane, Hanyong Eom, Chris H. Kim

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device-size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, better subthreshold swing, and improved energy dissipation. Simulation results using ISCAS benchmark circuits show that the critical path delay, power consumption, and energy consumption can be improved by up to 10.4%, 34.4%, and 41.2%, respectively.

Original language	English (US)
Pages (from-to)	821-828
Number of pages	8
Journal	IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume	15
Issue number	7
DOIs	https://doi.org/10.1109/TVLSI.2007.899239
State	Published - Jul 1 2007

Keywords

Circuit optimization
Process variation
Reverse short-channel effect (RSCE)
Subthreshold operation

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10.1109/TVLSI.2007.899239

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abstract = "The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device-size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, better subthreshold swing, and improved energy dissipation. Simulation results using ISCAS benchmark circuits show that the critical path delay, power consumption, and energy consumption can be improved by up to 10.4%, 34.4%, and 41.2%, respectively.",

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AU - Kim, Tae Hyoung

AU - Keane, John

AU - Eom, Hanyong

AU - Kim, Chris H.

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N2 - The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device-size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, better subthreshold swing, and improved energy dissipation. Simulation results using ISCAS benchmark circuits show that the critical path delay, power consumption, and energy consumption can be improved by up to 10.4%, 34.4%, and 41.2%, respectively.

AB - The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device-size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, better subthreshold swing, and improved energy dissipation. Simulation results using ISCAS benchmark circuits show that the critical path delay, power consumption, and energy consumption can be improved by up to 10.4%, 34.4%, and 41.2%, respectively.

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KW - Process variation

KW - Reverse short-channel effect (RSCE)

KW - Subthreshold operation

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