In this paper we present an analytical model for charge injection in MOS switches that is valid for all regions of operation. The model is general and can be applied for different load conditions. We analyze and develop two separate charge injection models for the different operating conditions. A simple continuos model that is valid for all conditions is then stitched together using appropriate functions. Simulation results from this model agrees well with previously published measurement results. The model is used to predict charge injection error and nonlinearity.
|Original language||English (US)|
|Journal||Proceedings - IEEE International Symposium on Circuits and Systems|
|State||Published - Jan 1 2000|
|Event||Proceedings of the IEEE 2000 Internaitonal Symposium on Circuits and Systems - Geneva, Switz|
Duration: May 28 2000 → May 31 2000