Universal analytic charge injection model

Yongwang Ding, Ramesh Harjani

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations


In this paper we present an analytical model for charge injection in MOS switches that is valid for all regions of operation. The model is general and can be applied for different load conditions. We analyze and develop two separate charge injection models for the different operating conditions. A simple continuos model that is valid for all conditions is then stitched together using appropriate functions. Simulation results from this model agrees well with previously published measurement results. The model is used to predict charge injection error and nonlinearity.

Original languageEnglish (US)
Pages (from-to)I-144-I-147
JournalProceedings - IEEE International Symposium on Circuits and Systems
StatePublished - 2000
EventProceedings of the IEEE 2000 International Symposium on Circuits and Systems, ISCAS 2000 - Geneva, Switz, Switzerland
Duration: May 28 2000May 31 2000


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