Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction

Y. Liu; Z. L. Rang; A. K. Fung; C. Cai; P. P. Ruden; M. I. Nathan; H. Shtrikman

doi:10.1063/1.1427753

Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction

Y. Liu
, Z. L. Rang
, A. K. Fung
, C. Cai
, P. P. Ruden
, M. I. Nathan
, H. Shtrikman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Uniaxial compressive stress was applied to an AlGaAs/GaAs heterojunction. The uniaxial stress coefficients of sheet resistivity, sheet electron concentration, and mobility were obtained. The hydrostatic pressure coefficient of sheet resistivity was also obtained and was used to explain the different magnitude of the uniaxial stress coefficients of sheet electron concentration in the [110] and [11̄0] directions. We obtain a value for the piezoelectric constant e₁₄ of AlAs to be -0.26 C/m², compared to the value -0.225 C/m² calculated by K. Hübner [Phys. Status Solidi B 57, 627 (1973)].

Original language	English (US)
Pages (from-to)	4586-4588
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	27
DOIs	https://doi.org/10.1063/1.1427753
State	Published - Dec 31 2001

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title = "Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction",

abstract = "Uniaxial compressive stress was applied to an AlGaAs/GaAs heterojunction. The uniaxial stress coefficients of sheet resistivity, sheet electron concentration, and mobility were obtained. The hydrostatic pressure coefficient of sheet resistivity was also obtained and was used to explain the different magnitude of the uniaxial stress coefficients of sheet electron concentration in the [110] and [1{\=1}0] directions. We obtain a value for the piezoelectric constant e14 of AlAs to be -0.26 C/m2, compared to the value -0.225 C/m2 calculated by K. H{\"u}bner [Phys. Status Solidi B 57, 627 (1973)].",

author = "Y. Liu and Rang, \{Z. L.\} and Fung, \{A. K.\} and C. Cai and Ruden, \{P. P.\} and Nathan, \{M. I.\} and H. Shtrikman",

year = "2001",

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doi = "10.1063/1.1427753",

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TY - JOUR

T1 - Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction

AU - Liu, Y.

AU - Rang, Z. L.

AU - Fung, A. K.

AU - Cai, C.

AU - Ruden, P. P.

AU - Nathan, M. I.

AU - Shtrikman, H.

PY - 2001/12/31

Y1 - 2001/12/31

N2 - Uniaxial compressive stress was applied to an AlGaAs/GaAs heterojunction. The uniaxial stress coefficients of sheet resistivity, sheet electron concentration, and mobility were obtained. The hydrostatic pressure coefficient of sheet resistivity was also obtained and was used to explain the different magnitude of the uniaxial stress coefficients of sheet electron concentration in the [110] and [11̄0] directions. We obtain a value for the piezoelectric constant e14 of AlAs to be -0.26 C/m2, compared to the value -0.225 C/m2 calculated by K. Hübner [Phys. Status Solidi B 57, 627 (1973)].

AB - Uniaxial compressive stress was applied to an AlGaAs/GaAs heterojunction. The uniaxial stress coefficients of sheet resistivity, sheet electron concentration, and mobility were obtained. The hydrostatic pressure coefficient of sheet resistivity was also obtained and was used to explain the different magnitude of the uniaxial stress coefficients of sheet electron concentration in the [110] and [11̄0] directions. We obtain a value for the piezoelectric constant e14 of AlAs to be -0.26 C/m2, compared to the value -0.225 C/m2 calculated by K. Hübner [Phys. Status Solidi B 57, 627 (1973)].

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U2 - 10.1063/1.1427753

DO - 10.1063/1.1427753

M3 - Article

AN - SCOPUS:0035981097

SN - 0003-6951

VL - 79

SP - 4586

EP - 4588

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 27

ER -

Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction

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