Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction

Y. Liu, Z. L. Rang, A. K. Fung, C. Cai, P. P. Ruden, M. I. Nathan, H. Shtrikman

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6 Scopus citations

Abstract

Uniaxial compressive stress was applied to an AlGaAs/GaAs heterojunction. The uniaxial stress coefficients of sheet resistivity, sheet electron concentration, and mobility were obtained. The hydrostatic pressure coefficient of sheet resistivity was also obtained and was used to explain the different magnitude of the uniaxial stress coefficients of sheet electron concentration in the [110] and [11̄0] directions. We obtain a value for the piezoelectric constant e14 of AlAs to be -0.26 C/m2, compared to the value -0.225 C/m2 calculated by K. Hübner [Phys. Status Solidi B 57, 627 (1973)].

Original languageEnglish (US)
Pages (from-to)4586-4588
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number27
DOIs
StatePublished - Dec 31 2001

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