Unexpected crystal and domain structures and properties in compositionally graded PbZr1-xTixO3 thin films

R. V.K. Mangalam, J. Karthik, Anoop R. Damodaran, Joshua C. Agar, Lane W. Martin

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

Synthesis of compositionally graded versions of PbZr1-xTi xO3 thin films results in unprecedented strains (as large as ≈4.5 × 105 m-1) and correspondingly unexpected crystal structures, ferroelectric domain structures, and properties. This includes the observation of built-in electric fields in films as large as 200 kV/cm. Compositional and strain gradients could represent a new direction of strain-control of materials.

Original languageEnglish (US)
Pages (from-to)1761-1767
Number of pages7
JournalAdvanced Materials
Volume25
Issue number12
DOIs
StatePublished - Mar 25 2013
Externally publishedYes

Keywords

  • bilayers
  • built-in potential
  • compositionally graded heterostructures
  • dielectric and ferroelectric properties
  • ferroelectric domain structures

Fingerprint Dive into the research topics of 'Unexpected crystal and domain structures and properties in compositionally graded PbZr<sub>1-x</sub>Ti<sub>x</sub>O<sub>3</sub> thin films'. Together they form a unique fingerprint.

Cite this