Undoped-body extremely thin SOI MOSFETs with back gates

Amlan Majumdar, Zhibin Ren, Steven J. Koester, Wilfried Haensch

Research output: Contribution to journalArticlepeer-review

71 Scopus citations


We present a detailed study of gate length scalability and device performance of undoped-body extremely thin silicon-on-insulator (ETSOI) MOSFETs with back gates. We show that short channel control improves with the application of back bias via a decrease in the electrostatic scaling length as the subthreshold charges move toward the front gate. We demonstrate that, even for undoped ETSOI devices with ∼8-nm SOI thickness, the improvement in short channel control with the application of a back bias translates to 10% higher drive current, 10% shorter gate lengths, and, consequently, 20% lower extrinsic gate delay at a fixed off-state current of 100 nA μ and a back oxide electric field of 1.5 MV/cm (0.5 MV/cm SOI field).

Original languageEnglish (US)
Pages (from-to)2270-2276
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number10
StatePublished - Sep 17 2009


  • Fully depleted SOI (FDSOI)
  • Short channel effects


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