Understanding the structure of Si nanoclusters in a/nc-Si: H films using spherical aberration-corrected transmission electron microscopy

Christopher R. Perrey, Siri S. Thompson, Markus Lentzen, Uwe Kortshagen, C. Barry Carter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Recent work has shown that the electrical properties of hydrogenated amorphous Si films with nanocrystalline inclusions (a/nc-Si:H) make this material a promising candidate for applications in solar cells. The present study applies the technique of spherical aberration-corrected high-resolution transmission electron microscopy for the identification and analysis of the crystalline content of an a/nc-Si:H film. By varying both the spherical aberration of the objective lens and the defocus, regions of crystallinity in the a/nc-Si:H film can be identified. This study reports the analysis of Si nanoparticles of approximately 1.5 nm in size. Some of these nanoparticles contain planar defects, such as twin defects and stacking faults. All particles observed were the same crystal structure as bulk Si, which agrees with theoretical cluster calculations. Beam damage was observed in the amorphous matrix for long electron-beam exposures.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsG. Ganguly, M. Kondo, E.A. Schiff, R. Carius, R. Biswas
Pages17-22
Number of pages6
Volume808
StatePublished - 2004
EventAmorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, United States
Duration: Apr 13 2004Apr 16 2004

Other

OtherAmorphous and Nanocrystalline Silicon Science and Technology - 2004
CountryUnited States
CitySan Francisco, CA
Period4/13/044/16/04

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