Abstract
GaN p-i-n photovoltaic diode arrays were fabricated from epitaxial films deposited on sapphire by molecular beam epitaxy. Peak UV responsivity was 0.11 A/W at 360 nm, corresponding to 48% internal quantum efficiency. Visible rejection over 400-800 nm was 3-4 orders of magnitude. Typical pulsed time response was measured at 8.2 μs. Spectral response modeling was performed to analyze the photocurrent contributions from photogenerated carrier drift in the depletion region and from minority carrier diffusion in the p and n layers. With the model, a maximum internal quantum efficiency of 55% at 360 nm was calculated for the photovoltaic diode structure.
Original language | English (US) |
---|---|
Pages (from-to) | 2282-2284 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 17 |
DOIs | |
State | Published - Apr 28 1997 |
Bibliographical note
Copyright:Copyright 2017 Elsevier B.V., All rights reserved.