Ultraviolet photoemission spectroscopy of hydrogen complex deactivation on InP:Zn(1 0 0) surfaces

M. D. Williams, S. C. Williams, S. A. Yasharahla, N. Jallow

Research output: Contribution to journalArticle

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Abstract

Ultraviolet photoemission spectroscopy is used to study the kinetics of the H-Zn complex deactivation in Zn doped InP(1 0 0). Hydrogen injected into the material electronically passivates the local carrier concentration. Reverse-biased anneals of the InP under ultra-high vacuum show a dramatic change in the work function of the material with increasing temperature. Spectral features are also shown to be sensitive to sample temperature. To our knowledge, we show the first view of hydrogen retrapping at the surface using photoemission spectroscopy. A simple photoelectron threshold energy analysis shows the state of charge compensation of the material.

Original languageEnglish (US)
Pages (from-to)8568-8570
Number of pages3
JournalApplied Surface Science
Volume253
Issue number20
DOIs
StatePublished - Aug 15 2007

Keywords

  • Hydrogenation
  • Photoemission spectroscopy
  • Vacuum

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