Ultrathin nitride layers grown by molecular-beam epitaxy and their effects on interface states in silicon metal-insulator-semiconductor field-effect transistors

R. T. Fayfield, J. Chen, M. S. Hagedorn, T. K. Higman, A. M. Moy, K. Y. Cheng

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

In this experiment the ultrahigh vacuum environment of a molecular-beam epitaxy reactor equipped with ammonia was used to thermally nitride silicon. The resulting thin silicon nitride films were incorporated as gate insulators of metal-insulator-semiconductor field-effect transistors. The fabrication of field-effect transistors enabled very accurate interface state characterization of the silicon-silicon nitride interface by the charge pumping technique. The ammonia nitridation of silicon was also investigated as a surface passivation technique for scanning probe microscope (both conductive tip atomic force microscope and scanning tunneling microscope) lithography techniques.

Original languageEnglish (US)
Pages (from-to)786-788
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number2
DOIs
StatePublished - Mar 1 1995
EventProceedings of the 14th North American Conference on Molecular-Beam Epitaxy - Urbana, IL, USA
Duration: Oct 10 1994Oct 12 1994

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