In this experiment the ultrahigh vacuum environment of a molecular-beam epitaxy reactor equipped with ammonia was used to thermally nitride silicon. The resulting thin silicon nitride films were incorporated as gate insulators of metal-insulator-semiconductor field-effect transistors. The fabrication of field-effect transistors enabled very accurate interface state characterization of the silicon-silicon nitride interface by the charge pumping technique. The ammonia nitridation of silicon was also investigated as a surface passivation technique for scanning probe microscope (both conductive tip atomic force microscope and scanning tunneling microscope) lithography techniques.
|Original language||English (US)|
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Mar 1 1995|
|Event||Proceedings of the 14th North American Conference on Molecular-Beam Epitaxy - Urbana, IL, USA|
Duration: Oct 10 1994 → Oct 12 1994