Ultralow contact resistance in electrolyte-gated organic thin film transistors

Daniele Braga; Mingjing Ha; Wei Xie; C. Daniel Frisbie

doi:10.1063/1.3518075

Ultralow contact resistance in electrolyte-gated organic thin film transistors

Daniele Braga, Mingjing Ha, Wei Xie, C. Daniel Frisbie

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

We show that the parasitic contact resistance in staggered organic thin film transistors employing a solid electrolyte as the gate dielectric is around R_C =10 ξ cm, two orders of magnitude lower than in conventional devices. Moreover, this parameter is only weakly dependent on the thickness of the semiconductor and on the nature of the metal/semiconductor pair. This unique feature of an electrolyte-gated transistor results from the electrochemical doping of the active layer occurring under the influence of the applied gate bias.

Original language	English (US)
Article number	193311
Journal	Applied Physics Letters
Volume	97
Issue number	19
DOIs	https://doi.org/10.1063/1.3518075
State	Published - Nov 8 2010

Bibliographical note

Funding Information:
The authors would like to thank Dr. Michael J. Renn at Optomec, Inc., for providing access to the Aerosol Jet printer. C.D.F. and D.B. thank NSF for financial support through Award No. ECCS-0925312.

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N2 - We show that the parasitic contact resistance in staggered organic thin film transistors employing a solid electrolyte as the gate dielectric is around RC =10 ξ cm, two orders of magnitude lower than in conventional devices. Moreover, this parameter is only weakly dependent on the thickness of the semiconductor and on the nature of the metal/semiconductor pair. This unique feature of an electrolyte-gated transistor results from the electrochemical doping of the active layer occurring under the influence of the applied gate bias.

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Ultralow contact resistance in electrolyte-gated organic thin film transistors

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