Ultralow contact resistance in electrolyte-gated organic thin film transistors

Daniele Braga, Mingjing Ha, Wei Xie, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

72 Scopus citations

Abstract

We show that the parasitic contact resistance in staggered organic thin film transistors employing a solid electrolyte as the gate dielectric is around RC =10 ξ cm, two orders of magnitude lower than in conventional devices. Moreover, this parameter is only weakly dependent on the thickness of the semiconductor and on the nature of the metal/semiconductor pair. This unique feature of an electrolyte-gated transistor results from the electrochemical doping of the active layer occurring under the influence of the applied gate bias.

Original languageEnglish (US)
Article number193311
JournalApplied Physics Letters
Volume97
Issue number19
DOIs
StatePublished - Nov 8 2010

Bibliographical note

Funding Information:
The authors would like to thank Dr. Michael J. Renn at Optomec, Inc., for providing access to the Aerosol Jet printer. C.D.F. and D.B. thank NSF for financial support through Award No. ECCS-0925312.

Fingerprint

Dive into the research topics of 'Ultralow contact resistance in electrolyte-gated organic thin film transistors'. Together they form a unique fingerprint.

Cite this