Ultradense phosphorous delta layers grown into silicon from PH3 molecular precursors

T. C. Shen, J. Y. Ji, M. A. Zudov, R. R. Du, J. S. Kline, J. R. Tucker

Research output: Contribution to journalArticlepeer-review

58 Scopus citations

Abstract

Phosphorous δ-doping layers were fabricated in silicon by PH 3 deposition at room temperature, followed by low-temperature Si epitaxy. Scanning tunneling microscope images indicate large H coverage, and regions of c(2×2) structure. Hall data imply full carrier activation with mobility <40cm2/Vs when the surface coverage is ≲0.2ML. Conductivity measurements show a ln(T) behavior at low temperatures, characteristic of a high-density two-dimensional conductor. Possible future applications to atom-scale electronics and quantum computation are briefly discussed.

Original languageEnglish (US)
Pages (from-to)1580-1582
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number9
DOIs
StatePublished - Mar 4 2002

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