Ultradense phosphorous delta layers grown into silicon from PH3 molecular precursors

T. C. Shen, J. Y. Ji, M. A. Zudov, R. R. Du, J. S. Kline, J. R. Tucker

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Phosphorous δ-doping layers were fabricated in silicon by PH 3 deposition at room temperature, followed by low-temperature Si epitaxy. Scanning tunneling microscope images indicate large H coverage, and regions of c(2×2) structure. Hall data imply full carrier activation with mobility <40cm2/Vs when the surface coverage is ≲0.2ML. Conductivity measurements show a ln(T) behavior at low temperatures, characteristic of a high-density two-dimensional conductor. Possible future applications to atom-scale electronics and quantum computation are briefly discussed.

Original languageEnglish (US)
Pages (from-to)1580-1582
Number of pages3
JournalApplied Physics Letters
Issue number9
StatePublished - Mar 4 2002

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