TY - GEN
T1 - Ultra-low power MOSFET-only micromation multi-bit quantizer for implantable neural applications
AU - Shen, Junyi
AU - Xu, Jian
AU - Wu, Xiaobo
AU - Zhao, Menglian
PY - 2010
Y1 - 2010
N2 - Several power and area efficient multi-bit quantizers are discussed in this paper. Through the comparison and analysis of the reported quantizers, a novel ultra-low power MOSFET-only micromation one for implantable neural applications is proposed to optimize the area and power consumption with the use of high density MOS-CAP and dynamic comparators. Simulated in a 0.18μm 1P6M CMOS process, the density of the proposed series-PMOS capacitor reaches 2.1fF/μm2 at a 1.2V supply voltage, which is almost 1.5 times higher than that of the traditional Metal-Insulator-Metal (MIM) capacitor. The current power consumption of the proposed 9-level quantizer is only 0.14μA clocked at 512 kHz, and its area cost is 11200μm2. Compared with the conventional architecture, over 95% power and 80% area are saved. The simulation results show that the proposed quantizer is suitable for Delta-Sigma modulator designs.
AB - Several power and area efficient multi-bit quantizers are discussed in this paper. Through the comparison and analysis of the reported quantizers, a novel ultra-low power MOSFET-only micromation one for implantable neural applications is proposed to optimize the area and power consumption with the use of high density MOS-CAP and dynamic comparators. Simulated in a 0.18μm 1P6M CMOS process, the density of the proposed series-PMOS capacitor reaches 2.1fF/μm2 at a 1.2V supply voltage, which is almost 1.5 times higher than that of the traditional Metal-Insulator-Metal (MIM) capacitor. The current power consumption of the proposed 9-level quantizer is only 0.14μA clocked at 512 kHz, and its area cost is 11200μm2. Compared with the conventional architecture, over 95% power and 80% area are saved. The simulation results show that the proposed quantizer is suitable for Delta-Sigma modulator designs.
UR - https://www.scopus.com/pages/publications/78751538664
UR - https://www.scopus.com/pages/publications/78751538664#tab=citedBy
U2 - 10.1109/ICSICT.2010.5667356
DO - 10.1109/ICSICT.2010.5667356
M3 - Conference contribution
AN - SCOPUS:78751538664
SN - 9781424457984
T3 - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
SP - 518
EP - 520
BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
T2 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Y2 - 1 November 2010 through 4 November 2010
ER -