Keyphrases
Gallium Arsenide
100%
Molecular Beam Epitaxy
100%
Ultra-high Frequency
100%
Photocurrent Decay
100%
Double Heterostructure
100%
GaAs(100)
25%
Wavelength Dependence
25%
High-resolution
12%
In Situ
12%
Oscillation
12%
GaAs Heterostructures
12%
Carrier Recombination
12%
Absorption Coefficient
12%
Rocking Curve
12%
Substrate Structure
12%
Decay Measurements
12%
Epitaxial Layers
12%
GaAs Substrate
12%
Interface Quality
12%
Minority Carrier Lifetime
12%
Recombination Properties
12%
Minority-carrier Recombination
12%
Material Science
Heterojunction
100%
Molecular Beam Epitaxy
100%
Gallium Arsenide
100%
Photoconductivity
100%
Carrier Lifetime
8%
Epitaxial Film
8%
Earth and Planetary Sciences
Heterojunctions
100%
Molecular Beam Epitaxy
100%
Photoconductivity
100%
Carrier Lifetime
50%
Engineering
Gallium Arsenide
100%
Heterojunctions
100%
Heterostructures
20%
Minority Carriers
20%
Gaas Heterostructures
10%
Back Side
10%
Gaas Substrate
10%
Front Side
10%
High Resolution
10%
Carrier Lifetime
10%
Absorptivity
10%
Absorption Coefficient
10%
Epitaxial Film
10%