UHV-MOCVD growth and in situ characterization of epitaxial TiO2 films

Samuel Chen, H. J. Gysling, G. R. Paz-Pujalt, T. N. Blanton, T. Castro, K. M. Chen, C. Fictorie, W. L. Gladfelter, A. Franciosi, P. I. Cohen, J. F. Evans

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin films of TiO2 were grown on SrTiO3 and Al2O3 using Ti(OC3H7)4 in the absence of any external oxygen source such as H2O or O2. On SrTiO3 (001), epitaxial anatase (001) formed even at temperatures (800°C) above the anatase to rutile phase transition temperature. In situ reflection high energy electron diffraction (RHEED) was used to monitor structural evolution during growth, and the films were further characterized by Auger electron spectroscopy (AES), transmission electron microscopy (TEM),and x-ray diffraction. Reaction kinetics were monitored using mass spectrometry, and these results, combined with temperature-programmed reaction spectroscopy, gave some insight into the deposition process.

Original languageEnglish (US)
Title of host publicationEvolution of Surface and Thin Film Microstructure
EditorsHarry A. Atwater, Eric Chason, Marcia H. Grabow, Max G. Lagally
PublisherPubl by Materials Research Society
Pages173-178
Number of pages6
ISBN (Print)1558991751
StatePublished - Dec 1 1993
EventProceedings of the 1992 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume280
ISSN (Print)0272-9172

Other

OtherProceedings of the 1992 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/30/9212/4/92

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