Two-dimensional electronic transport in AlGaN/GaN heterostructures

W. Walukiewicz, L. Hsu, E. E. Haller

Research output: Contribution to journalArticlepeer-review

Abstract

The mobility of a two-dimensional electron gas confined at the AlGaN/GaN interface has been calculated. Maximum low-temperature mobilities close to 106 cm2/Vs are predicted for optimized modulation doped heterostructures. The calculations indicate that the much lower electron mobility observed in currently available structures can be explained by scattering from unintentionally incorporated charged defects and/or donors. It has been also found that incorporation of 200 Å thick spacer maximizes the electrical conductivity in high purity GaN quantum wells.

Original languageEnglish (US)
Pages (from-to)1449-1452
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 2
StatePublished - Jan 1 1998

Keywords

  • Mobility
  • Scattering Mechanisms
  • Two-Dimensional Electron Gas

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